Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping

Hille, P. ; Müßener, J. ; Becker, P. ; De La Mata, M. ; Rosemann, N. ; Magén, C. (Universidad de Zaragoza) ; Arbiol, J. ; Teubert, J. ; Chatterjee, S. ; Schörmann, J. ; Eickhoff, M.

Resumen: We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10 exp 20 cm exp(–3) shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed.

Idioma: Inglés

DOI: 10.1063/1.4868411

Año: 2014

Publicado en: APPLIED PHYSICS LETTERS 104 (2014), 102104 [15 pp]
ISSN: 0003-6951

Factor impacto JCR: 3.302 (2014)

Categ. JCR: PHYSICS, APPLIED rank: 21 / 144 = 0.146 (2014) - Q1 - T1

Financiación: info:eu-repo/grantAgreement/EC/FP7/312483/EU/Enabling Science and Technology through European Electron Microscopy/ESTEEM 2

Tipo y forma: Artículo (Versión definitiva)

Área (Departamento): Área Física Materia Condensada (Dpto. Física Materia Condensa.)