Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping
Financiación FP7 / Fp7 Funds
Resumen: We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10 exp 20 cm exp(–3) shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed.
Idioma: Inglés
DOI: 10.1063/1.4868411
Año: 2014
Publicado en: APPLIED PHYSICS LETTERS 104 (2014), 102104 [15 pp]
ISSN: 0003-6951

Factor impacto JCR: 3.302 (2014)
Categ. JCR: PHYSICS, APPLIED rank: 21 / 144 = 0.146 (2014) - Q1 - T1
Factor impacto SCIMAGO:

Financiación: info:eu-repo/grantAgreement/EC/FP7/312483/EU/Enabling Science and Technology through European Electron Microscopy/ESTEEM 2
Tipo y forma: Article (Published version)
Área (Departamento): Área Física Materia Condensada (Dpto. Física Materia Condensa.)

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