000061345 001__ 61345 000061345 005__ 20210121114448.0 000061345 0247_ $$2doi$$a10.1063/1.4935494 000061345 0248_ $$2sideral$$a92917 000061345 037__ $$aART-2015-92917 000061345 041__ $$aeng 000061345 100__ $$aPing Wang, Y. 000061345 245__ $$aAbrupt GaP/Si hetero-interface using bistepped Si buffer 000061345 260__ $$c2015 000061345 5060_ $$aAccess copy available to the general public$$fUnrestricted 000061345 5203_ $$aWe evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth. 000061345 536__ $$9info:eu-repo/grantAgreement/EC/FP7/312483/EU/Enabling Science and Technology through European Electron Microscopy/ESTEEM 2 000061345 540__ $$9info:eu-repo/semantics/openAccess$$aAll rights reserved$$uhttp://www.europeana.eu/rights/rr-f/ 000061345 590__ $$a3.142$$b2015 000061345 591__ $$aPHYSICS, APPLIED$$b28 / 145 = 0.193$$c2015$$dQ1$$eT1 000061345 592__ $$a1.499$$b2015 000061345 593__ $$aPhysics and Astronomy (miscellaneous)$$c2015$$dQ1 000061345 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion 000061345 700__ $$aStodolna, J. 000061345 700__ $$aBahri, M. 000061345 700__ $$aKuyyalil, J. 000061345 700__ $$aNguyen Thanh, T. 000061345 700__ $$aAlmosni, S. 000061345 700__ $$aBernard, R. 000061345 700__ $$aTremblay, R. 000061345 700__ $$aDa Silva, M. 000061345 700__ $$aLétoublon, A. 000061345 700__ $$aRohel, T. 000061345 700__ $$aTavernier, K. 000061345 700__ $$aLargeau, L. 000061345 700__ $$aPatriarche, G. 000061345 700__ $$aLe Corre, A. 000061345 700__ $$aPonchet, A. 000061345 700__ $$0(orcid)0000-0002-6761-6171$$aMagen, C.$$uUniversidad de Zaragoza 000061345 700__ $$aCornet, C. 000061345 700__ $$aDurand, O. 000061345 7102_ $$12003$$2395$$aUniversidad de Zaragoza$$bDpto. Física Materia Condensa.$$cÁrea Física Materia Condensada 000061345 773__ $$g107, 19 (2015), 191603 [5 pp.]$$pAppl. phys. lett.$$tApplied Physics Letters$$x0003-6951 000061345 8564_ $$s1441331$$uhttps://zaguan.unizar.es/record/61345/files/texto_completo.pdf$$yVersión publicada 000061345 8564_ $$s141403$$uhttps://zaguan.unizar.es/record/61345/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada 000061345 909CO $$ooai:zaguan.unizar.es:61345$$particulos$$pdriver 000061345 951__ $$a2021-01-21-10:44:11 000061345 980__ $$aARTICLE