Abrupt GaP/Si hetero-interface using bistepped Si buffer
Financiación FP7 / Fp7 Funds
Resumen: We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.
Idioma: Inglés
DOI: 10.1063/1.4935494
Año: 2015
Publicado en: Applied Physics Letters 107, 19 (2015), 191603 [5 pp.]
ISSN: 0003-6951

Factor impacto JCR: 3.142 (2015)
Categ. JCR: PHYSICS, APPLIED rank: 28 / 145 = 0.193 (2015) - Q1 - T1
Factor impacto SCIMAGO: 1.499 - Physics and Astronomy (miscellaneous) (Q1)

Financiación: info:eu-repo/grantAgreement/EC/FP7/312483/EU/Enabling Science and Technology through European Electron Microscopy/ESTEEM 2
Tipo y forma: Article (Published version)
Área (Departamento): Área Física Materia Condensada (Dpto. Física Materia Condensa.)

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