Electrical transport properties of CaB6
Resumen: We report results from a systematic electron-transport study in a broad temperature range on 12 CaB6 single crystals. None of the crystals were intentionally doped. The different carrier densities observed presumably arise from slight variations in the Ca:B stoichiometry. In these crystals, the variation of the electrical resistivity and of the Hall effect with temperature can be consistently accounted for by the model we propose, in which B-antisite defects (B atom replacing Ca atom) are “amphoteric.” The magnetotransport measurements reveal that most of the samples we have studied are close to a metal-insulator transition at low temperatures. The magnetoresistance changes smoothly from negative—for weakly metallic samples—to positive values—for samples in a localized regime.
Idioma: Inglés
DOI: 10.1103/PhysRevB.90.155128
Año: 2014
Publicado en: Physical review. B, Condensed matter 90 (2014), 155128 [5 pp]
ISSN: 0163-1829

Factor impacto SCIMAGO:

Financiación: info:eu-repo/grantAgreement/ES/DGA/CAMRADS
Financiación: info:eu-repo/grantAgreement/ES/MINECO/MAT2012-38213-C02-01
Tipo y forma: Article (Published version)
Área (Departamento): Física de la Materia Condensada (Departamento de Física de la Materia Condensada)
Exportado de SIDERAL (2018-06-22-11:08:22)

Este artículo se encuentra en las siguientes colecciones:
articulos > articulos-por-area > fisica_de_la_materia_condensada



 Notice créée le 2018-06-22, modifiée le 2018-06-22


Versión publicada:
 PDF
Évaluer ce document:

Rate this document:
1
2
3
 
(Pas encore évalué)