A CMOS low pass filter for soc lock-in-based measurement devices

Pérez-Bailón, Jorge (Universidad de Zaragoza) ; Calvo, Belén (Universidad de Zaragoza) ; Medrano, Nicolás (Universidad de Zaragoza)
A CMOS low pass filter for soc lock-in-based measurement devices
Resumen: This paper presents a fully integrated Gm–C low pass ¿lter (LPF) based on a current ¿steering Gm reduction-tuning technique, specifically designed to operate as the output stage of a SoC lock-in amplifier. To validate this proposal, a first-order and a second-order single-ended topology were integrated into a 1.8 V to 0.18 µm CMOS (Complementary Metal-Oxide-Semiconductor) process, showing experimentally a tuneable cutoff frequency that spanned five orders of magnitude, from tens of mHz to kHz, with a constant current consumption (below 3 µA/pole), compact size (<0.0140 mm2 /pole), and a dynamic range better than 70 dB. Compared to state-of-the-art solutions, the proposed approach exhibited very competitive performances while simultaneously fully satisfying the demanding requirements of on-chip portable measurement systems in terms of highly efficient area and power. This is of special relevance, taking into account the current trend towards multichannel instruments to process sensor arrays, as the total area and power consumption will be proportional to the number of channels.
Idioma: Inglés
DOI: 10.3390/s19235173
Año: 2019
Publicado en: Sensors (Switzerland) 19, 23 (2019), 5173 [18 pp.]
ISSN: 1424-8220

Factor impacto JCR: 3.275 (2019)
Categ. JCR: CHEMISTRY, ANALYTICAL rank: 22 / 86 = 0.256 (2019) - Q2 - T1
Categ. JCR: INSTRUMENTS & INSTRUMENTATION rank: 15 / 64 = 0.234 (2019) - Q1 - T1
Categ. JCR: ENGINEERING, ELECTRICAL & ELECTRONIC rank: 77 / 266 = 0.289 (2019) - Q2 - T1

Factor impacto SCIMAGO: 0.653 - Instrumentation (Q1) - Atomic and Molecular Physics, and Optics (Q2) - Medicine (miscellaneous) (Q2) - Information Systems (Q2) - Analytical Chemistry (Q2) - Electrical and Electronic Engineering (Q2) - Biochemistry (Q3)

Financiación: info:eu-repo/grantAgreement/ES/MINECO-FEDER/TEC2015-65750-R
Tipo y forma: Artículo (Versión definitiva)
Área (Departamento): Área Electrónica (Dpto. Ingeniería Electrón.Com.)

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