Large memcapacitance and memristance at Nb:SrTiO3/La0.5Sr0.5Mn0.5Co0.5O3-d topotactic redox interface

Román Acevedo, W. ; Van Den Bosch, C.A.M. ; Aguirre, M.H. (Universidad de Zaragoza) ; Acha, C. ; Cavallaro, A. ; Ferreyra, C. ; Sánchez, M.J. ; Patrone, L. ; Aguadero, A. ; Rubi, D.

Resumen: The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large memcapacitive response of a perovskite memristive interface, using the topotactic redox ability of La0.5Sr0.5Mn0.5Co0.5O3-d (LSMCO, 0 = d = 0.62). We demonstrate that the multi-mem behavior originates at the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We found for our Nb:SrTiO3/LSMCO/Pt devices a memcapacitive effect CHIGH/CLOW ~100 at 150 kHz. The proof-of-concept interface reported here opens a promising venue to use topotactic redox materials for disruptive nanoelectronics, with straightforward applications in neuromorphic computing technology.

Idioma: Inglés

DOI: 10.1063/1.5131854

Año: 2020

Publicado en: Applied Physics Letters 116, 6 (2020), 063502 [5 pp.]
ISSN: 0003-6951

Factor impacto JCR: 3.791 (2020)

Categ. JCR: PHYSICS, APPLIED rank: 47 / 160 = 0.294 (2020) - Q2 - T1

Factor impacto SCIMAGO: 1.181 - Physics and Astronomy (miscellaneous) (Q1)

Financiación: info:eu-repo/grantAgreement/EC/H2020/734187/EU/Spin conversion, logic storage in oxide-based electronics/SPICOLOST

Tipo y forma: Artículo (Versión definitiva)

Área (Departamento): Área Física Materia Condensada (Dpto. Física Materia Condensa.)