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<dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:invenio="http://invenio-software.org/elements/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:identifier>doi:10.1063/1.5141154</dc:identifier><dc:language>eng</dc:language><dc:creator>Ferreiro-Vila, Elías</dc:creator><dc:creator>Bugallo, David</dc:creator><dc:creator>Magén, César</dc:creator><dc:creator>Rivadulla, Francisco</dc:creator><dc:creator>De Teresa, José María</dc:creator><dc:title>Topotactic transformation in SrFeO3- d triggered by low-dose Ga+ focused ion irradiation</dc:title><dc:identifier>ART-2020-117803</dc:identifier><dc:description>We introduce a single-step lithography process based on Ga+-focused ion beam (FIB) irradiation to trigger a topotactic transformation on SrFeO3-d thin films, from the perovskite to the brownmillerite (BM) crystal structure. The crystallographic transformation is triggered by preferential oxygen sputtering by Ga+-FIB irradiation, which favors the formation of the SrFeO2.5 BM phase. The transformation has been verified through micro-Raman spectroscopy on thin films subjected to Ga+-FIB irradiation under 5 kV and 30 kV. Inducing crystallographic transformations by FIB in a single-step process (without the need of resists), at a very high speed (low Ga+ doses are required, in the range of 1015 ions/cm2), with very high spatial resolution (limited by the ion beam spot, of a few square nanometers) and with potential for upscaling using broad Ga+ beams, this approach represents a significant forward step over previous methods using multistep lithographic or electrochemical procedures. All these virtues make this process appealing to develop applications based not only on SrFeO3-d thin films but also on other oxide films harnessing topotactic transformations.</dc:description><dc:date>2020</dc:date><dc:source>http://zaguan.unizar.es/record/101528</dc:source><dc:doi>10.1063/1.5141154</dc:doi><dc:identifier>http://zaguan.unizar.es/record/101528</dc:identifier><dc:identifier>oai:zaguan.unizar.es:101528</dc:identifier><dc:relation>info:eu-repo/grantAgreement/ES/DGA/E13-20R</dc:relation><dc:relation>info:eu-repo/grantAgreement/EC/H2020/734187/EU/Spin conversion, logic storage in oxide-based electronics/SPICOLOST</dc:relation><dc:relation>This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No H2020 734187-SPICOLOST</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MINECO/MAT2016-80762-R</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MINECO/MAT2017-82970-C2-2-R</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MINECO/MAT2018-102627-T</dc:relation><dc:identifier.citation>Applied Physics Letters 116, 16 (2020), 163103  [1-5 pp.]</dc:identifier.citation><dc:rights>by</dc:rights><dc:rights>http://creativecommons.org/licenses/by/3.0/es/</dc:rights><dc:rights>info:eu-repo/semantics/openAccess</dc:rights></dc:dc>

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