<?xml version="1.0" encoding="UTF-8"?>
<collection>
<dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:invenio="http://invenio-software.org/elements/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:identifier>doi:10.1039/d1na00580d</dc:identifier><dc:language>eng</dc:language><dc:creator>Salvador-Porroche A.</dc:creator><dc:creator>Sangiao S.</dc:creator><dc:creator>Magén C.</dc:creator><dc:creator>Barrado M.</dc:creator><dc:creator>Philipp P.</dc:creator><dc:creator>Belotcerkovtceva D.</dc:creator><dc:creator>Kamalakar M.V.</dc:creator><dc:creator>Cea P.</dc:creator><dc:creator>Teresa J.M. de</dc:creator><dc:title>Highly-efficient growth of cobalt nanostructures using focused ion beam induced deposition under cryogenic conditions: Application to electrical contacts on graphene, magnetism and hard masking</dc:title><dc:identifier>ART-2021-124952</dc:identifier><dc:description>Emergent technologies are required in the field of nanoelectronics for improved contacts and interconnects at nano and micro-scale. In this work, we report a highly-efficient nanolithography process for the growth of cobalt nanostructures requiring an ultra-low charge dose (15 µC cm-2, unprecedented in single-step charge-based nanopatterning). This resist-free process consists in the condensation of a ~28 nm-thick Co2(CO)8 layer on a substrate held at -100 °C, its irradiation with a Ga+ focused ion beam, and substrate heating up to room temperature. The resulting cobalt-based deposits exhibit sub-100 nm lateral resolution, display metallic behaviour (room-temperature resistivity of 200 µO cm), present ferromagnetic properties (magnetization at room temperature of 400 emu cm-3) and can be grown in large areas. To put these results in perspective, similar properties can be achieved by room-temperature focused ion beam induced deposition and the same precursor only if a 2 × 103 times higher charge dose is used. We demonstrate the application of such an ultra-fast growth process to directly create electrical contacts onto graphene ribbons, opening the route for a broad application of this technology to any 2D material. In addition, the application of these cryo-deposits for hard masking is demonstrated, confirming its structural functionality. This journal is © The Royal Society of Chemistry.</dc:description><dc:date>2021</dc:date><dc:source>http://zaguan.unizar.es/record/108378</dc:source><dc:doi>10.1039/d1na00580d</dc:doi><dc:identifier>http://zaguan.unizar.es/record/108378</dc:identifier><dc:identifier>oai:zaguan.unizar.es:108378</dc:identifier><dc:relation>info:eu-repo/grantAgreement/EUR/COST/CA19140 FIT4NANO</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/CSIC/PIE-202060E187</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/CSIC/PTI-001</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/DGA/E31-20R</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MCIU/MAT2017-82970-C2-2-R</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MCIU/PID2019-105881RB-I00</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MCIU/PID2020-112914RB-I00</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MINECO/MAT2018-102627-T</dc:relation><dc:identifier.citation>Nanoscale Advances 3, 19 (2021), 5656-5662</dc:identifier.citation><dc:rights>by</dc:rights><dc:rights>http://creativecommons.org/licenses/by/3.0/es/</dc:rights><dc:rights>info:eu-repo/semantics/openAccess</dc:rights></dc:dc>

</collection>