A fully-integrated 180 nm CMOS 1.2 V low-dropout regulator for low-power portable applications

Pérez-Bailón, J. (Universidad de Zaragoza) ; Calvo, B. (Universidad de Zaragoza) ; Medrano, N. (Universidad de Zaragoza)

Resumen: This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a -40 to 120 degrees C temperature range. To meet with the constraints of system-on-chip (SoC) battery-operated devices, ultralow power (I-q = 8.6 mu A) and minimum area consumption (0.109 mm(2)) are maintained, including a reference voltage V-ref = 0.4 V. It uses a high-gain dynamically biased folded-based error amplifier topology optimized for low-voltage operation that achieves an enhanced regulation-fast transient performance trade-off.

Idioma: Inglés

DOI: 10.3390/electronics10172108

Año: 2021

Publicado en: Electronics 10, 17 (2021), 2108 [16 pp]
ISSN: 2079-9292

Factor impacto JCR: 2.69 (2021)

Categ. JCR: COMPUTER SCIENCE, INFORMATION SYSTEMS rank: 100 / 164 = 0.61 (2021) - Q3 - T2
Categ. JCR: PHYSICS, APPLIED rank: 82 / 161 = 0.509 (2021) - Q3 - T2
Categ. JCR: ENGINEERING, ELECTRICAL & ELECTRONIC rank: 139 / 277 = 0.502 (2021) - Q3 - T2

Factor impacto CITESCORE: 3.7 - Computer Science (Q2) - Engineering (Q2)

Factor impacto SCIMAGO: 0.59 - Computer Networks and Communications (Q2) - Signal Processing (Q2) - Hardware and Architecture (Q2) - Control and Systems Engineering (Q2)

Financiación: info:eu-repo/grantAgreement/ES/MCIU/PID2019-106570RB-I00-AEI-10.13039-501100011033

Tipo y forma: Artículo (Versión definitiva)

Área (Departamento): Área Electrónica (Dpto. Ingeniería Electrón.Com.)