doi:10.3390/electronics10172108engPérez-Bailón, J.Calvo, B.Medrano, N.A fully-integrated 180 nm CMOS 1.2 V low-dropout regulator for low-power portable applicationsART-2021-125735This paper presents the design and postlayout simulation results of a capacitor-less low dropout (LDO) regulator fully integrated in a low-cost standard 180 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology which regulates the output voltage at 1.2 V from a 3.3 to 1.3 V battery over a -40 to 120 degrees C temperature range. To meet with the constraints of system-on-chip (SoC) battery-operated devices, ultralow power (I-q = 8.6 mu A) and minimum area consumption (0.109 mm(2)) are maintained, including a reference voltage V-ref = 0.4 V. It uses a high-gain dynamically biased folded-based error amplifier topology optimized for low-voltage operation that achieves an enhanced regulation-fast transient performance trade-off.2021http://zaguan.unizar.es/record/10957810.3390/electronics10172108http://zaguan.unizar.es/record/109578oai:zaguan.unizar.es:109578info:eu-repo/grantAgreement/ES/MCIU/PID2019-106570RB-I00-AEI-10.13039-501100011033Electronics 10, 17 (2021), 2108 [16 pp]byhttp://creativecommons.org/licenses/by/3.0/es/info:eu-repo/semantics/openAccess