<?xml version="1.0" encoding="UTF-8"?>
<collection>
<dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:invenio="http://invenio-software.org/elements/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:identifier>doi:10.1109/DTIP.2016.7514895</dc:identifier><dc:language>eng</dc:language><dc:creator>Berenschot, J.W.</dc:creator><dc:creator>Tiggelaar, R. M.</dc:creator><dc:creator>Geerlings, J.</dc:creator><dc:creator>Gardeniers, J.G.E.</dc:creator><dc:creator>Tas, N.R.</dc:creator><dc:creator>Malankowska, M.</dc:creator><dc:creator>Pina, M.P.</dc:creator><dc:creator>Mallada, R.</dc:creator><dc:title>3D-Fractal engineering based on oxide-only corner lithography</dc:title><dc:identifier>ART-2016-125584</dc:identifier><dc:description>This paper reports a new highly simplified machining process for three dimensional (3D)-fractal nanofabrication based on oxide-only corner lithography. It consists of a repeated sequence of wet etching (silicon), thermal oxidation and wet etching (silicon oxide). The previously reported 3D-fractal fabrication process needed additional low pressure chemical vapor deposition (LPCVD) steps of silicon nitride, as well as local oxidation of silicon (LOCOS). Employing this new procedure, a three generation folded silicon oxide fractal sheet with approx. a 10 µm footprint has been fabricated.</dc:description><dc:date>2016</dc:date><dc:source>http://zaguan.unizar.es/record/110769</dc:source><dc:doi>10.1109/DTIP.2016.7514895</dc:doi><dc:identifier>http://zaguan.unizar.es/record/110769</dc:identifier><dc:identifier>oai:zaguan.unizar.es:110769</dc:identifier><dc:identifier.citation>Symposium on Design, Test, Integration &amp; Packaging of MEMS/MOEMS (2016), [4 pp.]</dc:identifier.citation><dc:rights>All rights reserved</dc:rights><dc:rights>http://www.europeana.eu/rights/rr-f/</dc:rights><dc:rights>info:eu-repo/semantics/openAccess</dc:rights></dc:dc>

</collection>