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<dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:invenio="http://invenio-software.org/elements/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:identifier>doi:10.3390/nano13142042</dc:identifier><dc:language>eng</dc:language><dc:creator>Royo, Raquel</dc:creator><dc:creator>Sánchez, José G.</dc:creator><dc:creator>Li, Wenhui</dc:creator><dc:creator>Martinez-Ferrero, Eugenia</dc:creator><dc:creator>Palomares, Emilio</dc:creator><dc:creator>Andreu, Raquel</dc:creator><dc:creator>Franco, Santiago</dc:creator><dc:title>Novel spiro-core dopant-free hole transporting material for planar inverted Perovskite solar cells</dc:title><dc:identifier>ART-2023-134471</dc:identifier><dc:description>Hole-transporting materials (HTMs) have demonstrated their crucial role in promoting charge extraction, interface recombination, and device stability in perovskite solar cells (PSCs). Herein, we present the synthesis of a novel dopant-free spiro-type fluorine core-based HTM with four ethoxytriisopropylsilane groups (Syl-SC) for inverted planar perovskite solar cells (iPSCs). The thickness of the Syl-SC influences the performance of iPSCs. The best-performing iPSC is achieved with a 0.8 mg/mL Syl-SC solution (ca. 15 nm thick) and exhibits a power conversion efficiency (PCE) of 15.77%, with Jsc = 20.00 mA/cm2, Voc = 1.006 V, and FF = 80.10%. As compared to devices based on PEDOT:PSS, the iPSCs based on Syl-SC exhibit a higher Voc, leading to a higher PCE. Additionally, it has been found that Syl-SC can more effectively suppress charge interfacial recombination in comparison to PEDOT:PSS, which results in an improvement in fill factor. Therefore, Syl-SC, a facilely processed and efficient hole-transporting material, presents a promising cost-effective alternative for inverted perovskite solar cells.</dc:description><dc:date>2023</dc:date><dc:source>http://zaguan.unizar.es/record/127048</dc:source><dc:doi>10.3390/nano13142042</dc:doi><dc:identifier>http://zaguan.unizar.es/record/127048</dc:identifier><dc:identifier>oai:zaguan.unizar.es:127048</dc:identifier><dc:relation>info:eu-repo/grantAgreement/ES/AGAUR/2021 SGR01261</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/DGA/E47-23R</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/DGA-FEDER/E47-20R</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MICINN/CEX2019-000925-S</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MICINN/PID2019-104307GB-I00-AEI-10.13039-501100011033</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MICINN/PID2019-109389RB-I00</dc:relation><dc:identifier.citation>Nanomaterials 13, 14 (2023), 2042 [15 pp.]</dc:identifier.citation><dc:rights>by</dc:rights><dc:rights>http://creativecommons.org/licenses/by/3.0/es/</dc:rights><dc:rights>info:eu-repo/semantics/openAccess</dc:rights></dc:dc>

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