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<dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:invenio="http://invenio-software.org/elements/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:identifier>doi:10.1016/J.APMT.2023.102033</dc:identifier><dc:language>eng</dc:language><dc:creator>Frechilla, Alejandro</dc:creator><dc:creator>Napari, Mari</dc:creator><dc:creator>Strkalj, Nives</dc:creator><dc:creator>Barriuso, Eduardo</dc:creator><dc:creator>Niang, Kham</dc:creator><dc:creator>Hellenbrand, Markus</dc:creator><dc:creator>Strichovanec, Pavel</dc:creator><dc:creator>Simanjuntak, Firman Mangasa</dc:creator><dc:creator>Antorrena, Guillermo</dc:creator><dc:creator>Flewitt, Andrew</dc:creator><dc:creator>Magén, César</dc:creator><dc:creator>de la Fuente, Germán F.</dc:creator><dc:creator>MacManus-Driscoll, Judith L.</dc:creator><dc:creator>Angurel, Luis Alberto</dc:creator><dc:creator>Pardo, José Ángel</dc:creator><dc:title>Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing</dc:title><dc:identifier>ART-2024-136799</dc:identifier><dc:description>In this work we study the sub-nanosecond laser-induced crystallization of 10 nm-thick atomic layer deposited amorphous Hf0.5Zr0.5O2 (HZO) films in an air atmosphere. We used an infrared laser with 1064 nm wavelength and 800 ps pulses to anneal TiN/HZO/TiN capacitors by scanning an 80 μm-diameter spot along their top surface in a controlled way. The laser annealing process was optimised in terms of fluence to achieve the complete crystallization of HZO into a non-monoclinic polymorph, as demonstrated by X-ray diffraction and transmission electron microscopy. Piezoresponse force microscopy and polarization-field loops confirm that the optimal as-annealed HZO films are piezoelectric and ferroelectric from the first cycle on. Spatial selectivity was accomplished by scanning the laser on selected areas of the samples. Micro-diffraction experiments show that the transition between the crystallized and the amorphous region is abrupt within a distance of several hundred µm.</dc:description><dc:date>2024</dc:date><dc:source>http://zaguan.unizar.es/record/131287</dc:source><dc:doi>10.1016/J.APMT.2023.102033</dc:doi><dc:identifier>http://zaguan.unizar.es/record/131287</dc:identifier><dc:identifier>oai:zaguan.unizar.es:131287</dc:identifier><dc:relation>info:eu-repo/grantAgreement/ES/DGA-FEDER E28-23R</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/DGA/T54-23R</dc:relation><dc:relation>info:eu-repo/grantAgreement/EC/H2020/882929/EU/Efficient and Robust Oxide Switching/EROS</dc:relation><dc:relation>This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No H2020 882929-EROS</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MICINN-AEI/PID2020-112914RB-100/AEI/10.13039/501100011033</dc:relation><dc:identifier.citation>Applied Materials Today 36 (2024), 102033 [10 pp.]</dc:identifier.citation><dc:rights>by</dc:rights><dc:rights>https://creativecommons.org/licenses/by/4.0/deed.es</dc:rights><dc:rights>info:eu-repo/semantics/openAccess</dc:rights></dc:dc>

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