000131835 001__ 131835
000131835 005__ 20241125101139.0
000131835 0247_ $$2doi$$a10.1002/admi.202300639
000131835 0248_ $$2sideral$$a137022
000131835 037__ $$aART-2023-137022
000131835 041__ $$aeng
000131835 100__ $$aAtul, Atul
000131835 245__ $$aStrong substrate influence on atomic structure and properties of epitaxial VO2 thin films
000131835 260__ $$c2023
000131835 5060_ $$aAccess copy available to the general public$$fUnrestricted
000131835 5203_ $$aThe metal–insulator transition (MIT) observed in vanadium dioxide has been a topic of great research interest for past decades, with the underlying physics yet not fully understood due to the complex electron interactions and structures involved. The ability to understand and tune the MIT behavior is of vital importance from the perspective of both underlying fundamental science as well as potential applications. In this work, scanning transmission electron microscopy (STEM) is used to investigate cross‐section lamella of the VO2 films deposited using pulsed laser deposition on three substrates: c‐cut sapphire, TiO2(101) and TiO2(001). Advanced STEM imaging is performed in which also the oxygen atom columns are resolved. The overall film quality and structures on atomic and nanoscale are linked to the electrical transition characteristics. Relatively poor MIT characteristics are observed on c‐sapphire due to the presence of very small domains with six orientation variants, and on TiO2 (001) due to the presence of cracks induced by stress relaxation. However, the MIT on TiO2 (101) behaves favorably, despite similar stress relaxation which, however, only leads to domain boundaries but no cracks.
000131835 540__ $$9info:eu-repo/semantics/openAccess$$aby$$uhttp://creativecommons.org/licenses/by/3.0/es/
000131835 590__ $$a4.3$$b2023
000131835 592__ $$a1.194$$b2023
000131835 591__ $$aCHEMISTRY, MULTIDISCIPLINARY$$b72 / 231 = 0.312$$c2023$$dQ2$$eT1
000131835 593__ $$aMechanics of Materials$$c2023$$dQ1
000131835 591__ $$aMATERIALS SCIENCE, MULTIDISCIPLINARY$$b153 / 439 = 0.349$$c2023$$dQ2$$eT2
000131835 593__ $$aMechanical Engineering$$c2023$$dQ1
000131835 594__ $$a8.4$$b2023
000131835 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion
000131835 700__ $$aAhmadi, Majid
000131835 700__ $$aKoutsogiannis, Panagiotis
000131835 700__ $$aZhang, Heng
000131835 700__ $$aKooi, Bart J.
000131835 773__ $$g11, 3 (2023), 2300639 [13 pp.]$$pAdv. mater. interfaces$$tAdvanced Materials Interfaces$$x2196-7350
000131835 8564_ $$s13820658$$uhttps://zaguan.unizar.es/record/131835/files/texto_completo.pdf$$yVersión publicada
000131835 8564_ $$s2999468$$uhttps://zaguan.unizar.es/record/131835/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada
000131835 909CO $$ooai:zaguan.unizar.es:131835$$particulos$$pdriver
000131835 951__ $$a2024-11-22-12:01:53
000131835 980__ $$aARTICLE