000132485 001__ 132485 000132485 005__ 20240311111225.0 000132485 0247_ $$2doi$$a10.3762/bjnano.15.18 000132485 0248_ $$2sideral$$a137573 000132485 037__ $$aART-2024-137573 000132485 041__ $$aeng 000132485 100__ $$aSzkudlarek, Aleksandra 000132485 245__ $$aGraphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO<sub>2</sub> substrates 000132485 260__ $$c2024 000132485 5060_ $$aAccess copy available to the general public$$fUnrestricted 000132485 5203_ $$aGraphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. Although many years have passed since its discovery, manipulating single graphene layers is still challenging using standard resist-based lithography techniques. Recently, it has been shown that it is possible to etch graphene directly in water-assisted processes using the so-called focused electron-beam-induced etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or resist is a very appealing approach. During the process, on top of graphene nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low electron dose values (<8 nC/μm2). We demonstrate that graphene etching and topographical changes in SiO2 substrates can be controlled via electron beam parameters such as dwell time and dose. 000132485 540__ $$9info:eu-repo/semantics/openAccess$$aby$$uhttp://creativecommons.org/licenses/by/3.0/es/ 000132485 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion 000132485 700__ $$aMichalik, Jan M 000132485 700__ $$0(orcid)0000-0002-3723-9029$$aSerrano-Esparza, Inés 000132485 700__ $$aNovácek, Zdenek 000132485 700__ $$aNovotná, Veronika 000132485 700__ $$aOzga, Piotr 000132485 700__ $$aKapusta, Czeslaw 000132485 700__ $$0(orcid)0000-0001-9566-0738$$aDe Teresa, José María 000132485 773__ $$g15 (2024), 190-198$$pBeilstein j. nanotechnol.$$tBEILSTEIN JOURNAL OF NANOTECHNOLOGY$$x2190-4286 000132485 8564_ $$s5542313$$uhttps://zaguan.unizar.es/record/132485/files/texto_completo.pdf$$yVersión publicada 000132485 8564_ $$s1801879$$uhttps://zaguan.unizar.es/record/132485/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada 000132485 909CO $$ooai:zaguan.unizar.es:132485$$particulos$$pdriver 000132485 951__ $$a2024-03-11-09:52:17 000132485 980__ $$aARTICLE