000133078 001__ 133078
000133078 005__ 20240322124129.0
000133078 0247_ $$2doi$$a10.1016/j.mtphys.2024.101346
000133078 0248_ $$2sideral$$a137863
000133078 037__ $$aART-2024-137863
000133078 041__ $$aeng
000133078 100__ $$aPang, Guijian
000133078 245__ $$aThermal conductivity reduction in highly-doped cubic SiC by phonon-defect and phonon-electron scattering
000133078 260__ $$c2024
000133078 5060_ $$aAccess copy available to the general public$$fUnrestricted
000133078 5203_ $$aWe calculate the thermal conductivity (κ) of highly N- and B-doped cubic silicon carbide (SiC) with defect concentrations (Cdef) from 1016 to 1021 cm−3 and compare the relative importance of the extrinsic phonon-electron and phonon-defect scattering mechanisms. Whereas phonon-electron scattering dominates over phonon-defect scattering at low Cdef up to about 1020 cm−3 at room temperature in N-doped SiC, phonon-defect scattering determines the thermal conductivity reduction in the B-doped case. This strong contrast between the electron- and hole-doped cases is related to the much higher ionization energy of B acceptors as compared to that of N donors, and to the resonant scattering caused by B substitution, not present for the N impurity. The similar features can be found in hexagonal phase 4H–SiC. Our results highlight the importance of considering the phonon-electron scattering mechanism together with other phonon scattering processes when calculating the thermal conductivity of doped semiconductors.
000133078 540__ $$9info:eu-repo/semantics/openAccess$$aby-nc$$uhttp://creativecommons.org/licenses/by-nc/3.0/es/
000133078 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion
000133078 700__ $$aMeng, Fanchen
000133078 700__ $$aChen, Yani
000133078 700__ $$aKatre, Ankita
000133078 700__ $$0(orcid)0000-0003-0971-1098$$aCarrete, Jesús
000133078 700__ $$aDongre, Bonny
000133078 700__ $$aMadsen, Georg K.H.
000133078 700__ $$aMingo, Natalio
000133078 700__ $$aLi, Wu
000133078 773__ $$g41 (2024), 101346 [7 pp.]$$tMaterials Today Physics$$x2542-5293
000133078 8564_ $$s5029307$$uhttps://zaguan.unizar.es/record/133078/files/texto_completo.pdf$$yVersión publicada
000133078 8564_ $$s2657500$$uhttps://zaguan.unizar.es/record/133078/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada
000133078 909CO $$ooai:zaguan.unizar.es:133078$$particulos$$pdriver
000133078 951__ $$a2024-03-22-09:46:15
000133078 980__ $$aARTICLE