000134894 001__ 134894
000134894 005__ 20240503133220.0
000134894 0247_ $$2doi$$a10.1109/TIM.2024.3381286
000134894 0248_ $$2sideral$$a138350
000134894 037__ $$aART-2024-138350
000134894 041__ $$aeng
000134894 100__ $$0(orcid)0000-0003-2734-253X$$aMarqués-García, Jorge$$uUniversidad de Zaragoza
000134894 245__ $$aCharacterization of 65-nm CMOS Integrated Resistors in the Cryogenic Regime
000134894 260__ $$c2024
000134894 5060_ $$aAccess copy available to the general public$$fUnrestricted
000134894 5203_ $$aThis article presents the experimental characterization and modeling of CMOS resistors in a temperature range extending from room temperature (300 K) down to the deep cryogenic regime at 4 K. A set of poly-silicon resistors with different bulk structures and sizing have been fabricated in a 65 nm CMOS process and their I–V curves have been obtained experimentally in the 4 to 300 K range with a temperature step of only 0.5 K to obtain a large set of resistance values equally distributed along the temperature range. The plot of the resistance values against temperature has allowed us to obtain the temperature coefficient α(T )of the different resistors in the whole temperature range down to 4 K. Interestingly, for all the measured resistors the α(T )–T curves show a change in tendency for temperatures spanning from 66 to 98 K, this is, in the vicinity of the condensation temperature of nitrogen (77 K), where most of the thermal contraction of materials occurs
000134894 536__ $$9info:eu-repo/grantAgreement/ES/AEI/PID2020-114110RA-I00
000134894 540__ $$9info:eu-repo/semantics/openAccess$$aby-nc-nd$$uhttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
000134894 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion
000134894 700__ $$0(orcid)0000-0002-8617-5703$$aPérez-Bailón, Jorge
000134894 700__ $$0(orcid)0000-0003-0182-7723$$aCelma, Santiago$$uUniversidad de Zaragoza
000134894 700__ $$0(orcid)0000-0002-8236-825X$$aSánchez-Azqueta, Carlos$$uUniversidad de Zaragoza
000134894 7102_ $$12002$$2385$$aUniversidad de Zaragoza$$bDpto. Física Aplicada$$cÁrea Física Aplicada
000134894 7102_ $$12004$$2X$$aUniversidad de Zaragoza$$bDpto. Física Teórica$$cProy. investigación HCA
000134894 7102_ $$15008$$2250$$aUniversidad de Zaragoza$$bDpto. Ingeniería Electrón.Com.$$cÁrea Electrónica
000134894 773__ $$g73 (2024), 3 pp.$$pIEEE trans. instrum. meas.$$tIEEE Transactions on Instrumentation and Measurement$$x0018-9456
000134894 8564_ $$s3805657$$uhttps://zaguan.unizar.es/record/134894/files/texto_completo.pdf$$yVersión publicada
000134894 8564_ $$s3036339$$uhttps://zaguan.unizar.es/record/134894/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada
000134894 909CO $$ooai:zaguan.unizar.es:134894$$particulos$$pdriver
000134894 951__ $$a2024-05-03-11:07:09
000134894 980__ $$aARTICLE