doi:10.1063/1.3328101engMarcano, N.Sangiao, S.Plaza, M.Pérez, L.Pacheco, A. F.Córdoba, R.Sánchez, M. C.Morellón, L.Ibarra, M. R.De Teresa, J. M.Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi NanowiresART-2010-71667We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5–300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.2010http://zaguan.unizar.es/record/14525410.1063/1.3328101http://zaguan.unizar.es/record/145254oai:zaguan.unizar.es:145254info:eu-repo/grantAgreement/ES/MICINN/MAT2007-65965-C02- 02info:eu-repo/grantAgreement/ES/MICINN/MAT2008-06567-C02Applied Physics Letters 96, 8 (2010), 1460-1463All rights reservedhttp://www.europeana.eu/rights/rr-f/info:eu-repo/semantics/openAccess