Measurement of half-bridge parasitic impedances using a flexible test probe

Llamazares, A. (Universidad de Zaragoza) ; Martín-Arroyo, S. (Universidad de Zaragoza) ; García-Gracia, M. (Universidad de Zaragoza)

Resumen: The use of SiC MOSFETs in power applications allows to increase power density and efficiency because switching frequencies are higher. However, parasitic impedances are responsible for oscillations that can have negative effects.
In this paper we analyse the parasitic impedances of a half-bridge formed by a busbar PCB laminated with SiC MOSFETs. Using the distributed parameter approach, we have developed a procedure to characterize the impedance of the switching current loop responsible for the oscillations in the switching. According to the above, the conclusions obtained will be presented.

Idioma: Inglés

DOI: 10.52152/4103

Año: 2024

Publicado en: Renewable Energy and Power Quality Journal 22, 2 (2024), 173-178
ISSN: 2172-038X

Tipo y forma: Artículo (Versión definitiva)

Área (Departamento): Área Ingeniería Eléctrica (Dpto. Ingeniería Eléctrica)