147161 20260112133313.0 doi 10.52152/4103 sideral 140993 ART-2024-140993 eng Llamazares, A. Universidad de Zaragoza Measurement of half-bridge parasitic impedances using a flexible test probe 2024 Access copy available to the general public Unrestricted The use of SiC MOSFETs in power applications allows to increase power density and efficiency because switching frequencies are higher. However, parasitic impedances are responsible for oscillations that can have negative effects. In this paper we analyse the parasitic impedances of a half-bridge formed by a busbar PCB laminated with SiC MOSFETs. Using the distributed parameter approach, we have developed a procedure to characterize the impedance of the switching current loop responsible for the oscillations in the switching. According to the above, the conclusions obtained will be presented. info:eu-repo/semantics/openAccess All rights reserved http://www.europeana.eu/rights/rr-f/ 0.167 2024 Electrical and Electronic Engineering 2024 Q4 Renewable Energy, Sustainability and the Environment 2024 Q4 Energy Engineering and Power Technology 2024 Q4 0.8 2024 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion Martín-Arroyo, S. Universidad de Zaragoza (orcid)0000-0002-7008-7610 García-Gracia, M. Universidad de Zaragoza (orcid)0000-0002-5727-5705 5009 535 Universidad de Zaragoza Dpto. Ingeniería Eléctrica Área Ingeniería Eléctrica 22, 2 (2024), 173-178 Renewable energy power qual. j. Renewable Energy and Power Quality Journal 2172-038X 899758 http://zaguan.unizar.es/record/147161/files/texto_completo.pdf Versión publicada 2613098 http://zaguan.unizar.es/record/147161/files/texto_completo.jpg?subformat=icon icon Versión publicada oai:zaguan.unizar.es:147161 articulos driver 2026-01-12-13:03:24 ARTICLE