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<dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:invenio="http://invenio-software.org/elements/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:identifier>doi:10.1039/d4nr02680b</dc:identifier><dc:language>eng</dc:language><dc:creator>Herrer, Lucía</dc:creator><dc:creator>Salvador-Porroche, Alba</dc:creator><dc:creator>Hlawacek, Gregor</dc:creator><dc:creator>Cea, Pilar</dc:creator><dc:creator>De Teresa, José María</dc:creator><dc:title>Fabrication of palladium-enriched metallic structures by direct focused He&lt;sup&gt;+&lt;/sup&gt; and Ne&lt;sup&gt;+&lt;/sup&gt; beam nanowriting from organometallic thin films: a comparison with Ga&lt;sup&gt;+&lt;/sup&gt; and e&lt;sup&gt;-&lt;/sup&gt; beams</dc:title><dc:identifier>ART-2024-141053</dc:identifier><dc:description>A direct nanowriting procedure using helium- and neon-focused ion beams and spin-coated organometallic thin films is introduced and applied to the fabrication of Pd-enriched metallic structures in a single lithography step. This process presents significant advantages over multi-step resist-based lithography and focused beam-induced deposition using gaseous precursors, such as its simplicity and speed, respectively. The optimized process leads to Pd-rich structures with low electrical resistivity values of 141 and 152 μΩ cm under Ne+ or He+ fluences of 1000 and 5000 μC cm−2, respectively. These resistivity values correlate well with compositional and microstructural studies, indicating a high Pd metallic content in a dense structure with a few-nm grain size. The obtained results are compared to similar structures fabricated by direct electron and gallium beam nanowriting, demonstrating the full potential of nanopatterned Pd-based organometallic thin films under the most common focused charged beams. The practical applications of combining spin-coated organometallic thin films with focused beam nanowriting in micro- and nano-lithography modern procedures are also discussed in this contribution.</dc:description><dc:date>2024</dc:date><dc:source>http://zaguan.unizar.es/record/147257</dc:source><dc:doi>10.1039/d4nr02680b</dc:doi><dc:identifier>http://zaguan.unizar.es/record/147257</dc:identifier><dc:identifier>oai:zaguan.unizar.es:147257</dc:identifier><dc:relation>info:eu-repo/grantAgreement/ES/AEI/PDC2023-145810-I00</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/AEI/PID2020-11223914RB-I00</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/AEI/PID2022-141433OB-I00</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/AEI/PID2023-146451OB-I00</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/AEI/RED2022-134096-T</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/AEI/TED2021-131318B-I00</dc:relation><dc:relation>info:eu-repo/grantAgreement/EUR/COST-Action/CA19140</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/DGA/E13-23R</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/DGA/E31-23R</dc:relation><dc:identifier.citation>Nanoscale 16, 45 (2024), 21128-21137</dc:identifier.citation><dc:rights>by-nc</dc:rights><dc:rights>https://creativecommons.org/licenses/by-nc/4.0/deed.es</dc:rights><dc:rights>info:eu-repo/semantics/openAccess</dc:rights></dc:dc>

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