000148068 001__ 148068
000148068 005__ 20250110163829.0
000148068 0247_ $$2doi$$a10.1016/j.physo.2024.100249
000148068 0248_ $$2sideral$$a141584
000148068 037__ $$aART-2025-141584
000148068 041__ $$aeng
000148068 100__ $$aCeballos Medina, Santiago
000148068 245__ $$aResistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes
000148068 260__ $$c2025
000148068 5060_ $$aAccess copy available to the general public$$fUnrestricted
000148068 5203_ $$aThe resistive switching (RS) effect in ferroelectric oxides continues to attract significant attention due to its potential applications in nonvolatile memory and neuromorphic computing devices. In this study, we investigate the RS properties of BiFeO3/YBa2Cu3O7−d (BFO/YBCO) bilayers grown on LSAT substrates, comparing two different top-electrode materials: YBCO and Ag. The devices were fabricated using reactive sputtering at high oxygen pressure, and their RS mechanisms were investigated via current-voltage (I-V) measurements. We find all devices exhibit unipolar behavior, with symmetric RS behavior observed in devices with YBCO top electrodes and asymmetric RS in those with Ag top electrodes. Devices with YBCO top electrodes display ohmic conduction, whereas Ag top electrode devices exhibit a combination of Schottky, Poole-Frenkel emission, and spaced charge limited conduction mechanisms. Resistance versus time measurements were performed over 30 cycles with 20 different writing voltages to evaluate the ratio between the low resistance state (LRS) and high resistance state (HRS). Ag top electrodes devices consistently exhibited higher resistance ratios ‒approximately three times larger‒ compared to YBCO devices. Furthermore, better temporal stability of HRS and LRS was observed in devices with Ag top electrodes, attributed to the differences in the Fermi energy levels between YBCO, Ag and BFO. The superior performance of Ag top electrode devices, including their higher storage density and low operation parameters (0.25 V and 5 nA), highlights their potential for energy-efficient applications in future oxide-based memory and neuromorphic devices.
000148068 540__ $$9info:eu-repo/semantics/openAccess$$aby-nc-nd$$uhttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
000148068 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion
000148068 700__ $$aMarín Mercado, Lorena
000148068 700__ $$aCardona-Rodríguez, Alexander
000148068 700__ $$aQuiñonez Penagos, Mario Fernando
000148068 700__ $$0(orcid)0000-0002-6761-6171$$aMagén, César
000148068 700__ $$aRodríguez, Luis Alfredo
000148068 700__ $$aRamírez, Juan Gabriel
000148068 773__ $$g22 (2025), 100249 [7 pp.]$$tPhysics Open$$x2666-0326
000148068 8564_ $$s6017892$$uhttps://zaguan.unizar.es/record/148068/files/texto_completo.pdf$$yVersión publicada
000148068 8564_ $$s2678110$$uhttps://zaguan.unizar.es/record/148068/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada
000148068 909CO $$ooai:zaguan.unizar.es:148068$$particulos$$pdriver
000148068 951__ $$a2025-01-10-14:26:10
000148068 980__ $$aARTICLE