000148296 001__ 148296
000148296 005__ 20250923084432.0
000148296 0247_ $$2doi$$a10.1021/acsomega.4c06606
000148296 0248_ $$2sideral$$a141737
000148296 037__ $$aART-2024-141737
000148296 041__ $$aeng
000148296 100__ $$aHidrogo-Rico, Mario Alberto
000148296 245__ $$aTailoring Nickel Oxide Thin Films: Comparative Study of Oxidizing Agents in Thermal and Plasma-Enhanced Atomic Layer Deposition
000148296 260__ $$c2024
000148296 5060_ $$aAccess copy available to the general public$$fUnrestricted
000148296 5203_ $$aThermal atomic layer deposition (TALD) and plasma atomic layer deposition (PALD) were used for producing thin NiOx films from nickel(II) acetylacetonate Ni(acac)2, employing different oxidizing agents (deionized water H2O, ozone O3, and molecular oxygen O2). The films were deposited at 300 °C (TALD) and 220 °C (PALD) over glass substrates; their physical and chemical properties were considerably influenced by the choice of oxidizing agents. In particular, ALD(H2O) samples had a low growth per cycle (GPC) and a high concentration of defects. The best NiOx parameters were achieved with PALD(O2), featuring high GPC (0.07 nm/cycle), high optical transparency in the visible region, electrical resistivity (1.18 × 104 Ω·cm), good carrier concentration (8.82 × 1013 cm–3), and common mobility (5.98 cm2/V·s). The resulting NiOx films are polycrystalline and homogeneous in thickness and composition. According to ultraviolet photoelectron spectroscopy (UPS), work function φ and the valence band maximum EV can be tuned by the choice of the coreactant employed, with variations of up to ∼1 eV between TALD and PALD synthesis. Our results suggest that PALD permits one to achieve a better energy band alignment of NiOx and CsFAMAPbBrI perovskite, which is promising for solar cell applications.
000148296 540__ $$9info:eu-repo/semantics/openAccess$$aby-nc-nd$$uhttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
000148296 590__ $$a4.3$$b2024
000148296 592__ $$a0.773$$b2024
000148296 591__ $$aCHEMISTRY, MULTIDISCIPLINARY$$b81 / 239 = 0.339$$c2024$$dQ2$$eT2
000148296 593__ $$aChemical Engineering (miscellaneous)$$c2024$$dQ1
000148296 593__ $$aChemistry (miscellaneous)$$c2024$$dQ2
000148296 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion
000148296 700__ $$aNedev, Nicola
000148296 700__ $$aHorley, Paul
000148296 700__ $$aMendívil, María Isabel
000148296 700__ $$aCastillo-Saenz, Jhonathan
000148296 700__ $$aMartínez-Guerra, Edgar
000148296 700__ $$0(orcid)0000-0001-6040-1920$$aJuarez-Perez, Emilio J.
000148296 700__ $$aAguirre-Tostado, Francisco Servando
000148296 700__ $$aSusarrey-Arce, Arturo
000148296 700__ $$aMartínez-Guerra, Eduardo
000148296 773__ $$g10, 1 (2024), 422-438$$pACS Omega$$tACS OMEGA$$x2470-1343
000148296 8564_ $$s9161228$$uhttps://zaguan.unizar.es/record/148296/files/texto_completo.pdf$$yVersión publicada
000148296 8564_ $$s3313935$$uhttps://zaguan.unizar.es/record/148296/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada
000148296 909CO $$ooai:zaguan.unizar.es:148296$$particulos$$pdriver
000148296 951__ $$a2025-09-22-14:44:22
000148296 980__ $$aARTICLE