149901 20251017144644.0 doi 10.1109/JPHOTOV.2019.2942487 sideral 141531 ART-2019-141531 eng Calvo-Almazán, Irene (orcid)0000-0002-3448-9831 Strain mapping of CdTe grains in photovoltaic devices 2019 Access copy available to the general public Unrestricted Strain within grains and at grain boundaries (GBs) in polycrystalline thin-film absorber layers limits the overall performance because of higher defect concentrations and band fluctuations. However, the nanoscale strain distribution in operational devices is not easily accessible using standard methods. X-ray nanodiffraction offers the unique possibility to evaluate the strain or lattice spacing at nanoscale resolution. Furthermore, the combination of nanodiffraction with additional techniques in the framework of multimodal scanning X-ray microscopy enables the direct correlation of the strain with material and device parameters such as the elemental distribution or local performance. This approach is applied for the investigation of the strain distribution in CdTe grains in fully operational photovoltaic solar cells. It is found that the lattice spacing in the (111) direction remains fairly constant in the grain cores but systematically decreases at the GBs. The lower strain at GBs is accompanied by an increase of the total tilt. These observations are both compatible with the inhomogeneous incorporation of smaller atoms into the lattice, and local stress induced by neighboring grains. info:eu-repo/semantics/openAccess All rights reserved http://www.europeana.eu/rights/rr-f/ 3.052 2019 MATERIALS SCIENCE, MULTIDISCIPLINARY 133 / 314 = 0.424 2019 Q2 T2 PHYSICS, APPLIED 50 / 154 = 0.325 2019 Q2 T1 ENERGY & FUELS 59 / 112 = 0.527 2019 Q3 T2 0.997 2019 Condensed Matter Physics 2019 Q1 Electronic, Optical and Magnetic Materials 2019 Q1 Electrical and Electronic Engineering 2019 Q1 info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion Ulvestad, A. Colegrove, E. Ablekim, T. Holt, M. V. Maddali, S. Lauhon, L. J. Bertoni, M. I. Yan, H. Nazaretski, E. Chu, Y. S. Hruszkewycz, S. O. Stuckelberger, M. E. 9, 6 (2019), 1790-1799 IEEE j. photovolt. IEEE journal of photovoltaics 2156-3381 9199090 http://zaguan.unizar.es/record/149901/files/texto_completo.pdf Postprint 3769782 http://zaguan.unizar.es/record/149901/files/texto_completo.jpg?subformat=icon icon Postprint oai:zaguan.unizar.es:149901 articulos driver 2025-10-17-14:33:17 ARTICLE