000160977 001__ 160977
000160977 005__ 20251017144558.0
000160977 0247_ $$2doi$$a10.1021/acsanm.5c00681
000160977 0248_ $$2sideral$$a144160
000160977 037__ $$aART-2025-144160
000160977 041__ $$aeng
000160977 100__ $$aMajumder, Supriyo
000160977 245__ $$aChemistry and Interfacial Structure Promoting Quasi-van der Waals Epitaxial Growth of WS2 Nanosheets on Sapphire for Prospective Application in Field-Effect Transistors
000160977 260__ $$c2025
000160977 5060_ $$aAccess copy available to the general public$$fUnrestricted
000160977 5203_ $$aHow do chemical and structural modifications to the supporting crystal surface affect the subsequent van der Waals (vdW) or quasi(Q)-vdW epitaxial growth of 2D nanocrystals? Developing an atomic-scale picture of such an interfacial system is crucial for understanding its impact on the physical and chemical properties of the supported 2D materials. The elucidation of the interfacial structure and chemistry needed to promote the Q-vdW epitaxial growth of 2D tungsten disulfide (WS2) nanocrystals contributes to the growth mechanism understanding, thus pushing forward the integration of such atomically thin semiconductors toward real field-effect transistor applications. In addition to an atomic-force microscopy top view, we showcase a combination of X-ray techniques for a top-to-bottom investigation of the complexities of the buried interface structures. This approach uses X-ray photoelectron spectroscopy, X-ray standing wave excited X-ray fluorescence, and crystal truncation rod scattering to produce a highly resolved chemical-state-specific 3D atomic map for the extended interface structure of WS2/α-Al2O3(001). Employing these detailed analysis methods, along with density functional theory to further refine the picoscale structure, we demonstrate how two different types of interface engineering during the pregrowth stage lead to significant differences in the chemical and structural modifications to the terminal surface of c-face sapphire, which in turn leads to substantial differences in the submonolayer growth of supported WS2 2D nanocrystals in terms of lateral domain sizes, epitaxial registry, vdW gaps, and stability. © 2025 American Chemical Society.
000160977 536__ $$9info:eu-repo/grantAgreement/ES/AEI/PID2023-151080NB-I00$$9info:eu-repo/grantAgreement/ES/DGA/E13-23R$$9info:eu-repo/grantAgreement/ES/MICIU/CEX2023-001286-S$$9info:eu-repo/grantAgreement/ES/MICIU/PRTR-C17.I1
000160977 540__ $$9info:eu-repo/semantics/embargoedAccess$$aAll rights reserved$$uhttp://www.europeana.eu/rights/rr-f/
000160977 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/acceptedVersion
000160977 700__ $$aShinde, Nitin
000160977 700__ $$aCavin, John
000160977 700__ $$aChen, Chen
000160977 700__ $$aDey, Arka Bikash
000160977 700__ $$aNarayanachari, K.V.L.V.
000160977 700__ $$aZhang, Jiaqi
000160977 700__ $$aGarcia-Wetten, David
000160977 700__ $$aDieguez, Oswaldo
000160977 700__ $$0(orcid)0000-0002-9102-7895$$aHettler, Simon
000160977 700__ $$aCohen, Assael
000160977 700__ $$aKeane, Denis T.
000160977 700__ $$0(orcid)0000-0002-2071-9093$$aArenal, Raul
000160977 700__ $$aRondinelli, James M.
000160977 700__ $$aIsmach, Ariel
000160977 700__ $$aBedzyk, Michael J.
000160977 773__ $$g8, 18 (2025), 9256-9267$$pACS appl. nano mater.$$tACS APPLIED NANO MATERIALS$$x2574-0970
000160977 8564_ $$s4315945$$uhttps://zaguan.unizar.es/record/160977/files/texto_completo.pdf$$yPostprint$$zinfo:eu-repo/date/embargoEnd/2026-04-29
000160977 8564_ $$s1238944$$uhttps://zaguan.unizar.es/record/160977/files/texto_completo.jpg?subformat=icon$$xicon$$yPostprint$$zinfo:eu-repo/date/embargoEnd/2026-04-29
000160977 909CO $$ooai:zaguan.unizar.es:160977$$particulos$$pdriver
000160977 951__ $$a2025-10-17-14:13:49
000160977 980__ $$aARTICLE