<?xml version="1.0" encoding="UTF-8"?>
<xml>
<records>
<record>
  <contributors>
    <authors>
      <author>Majumder, Supriyo</author>
      <author>Shinde, Nitin</author>
      <author>Cavin, John</author>
      <author>Chen, Chen</author>
      <author>Dey, Arka Bikash</author>
      <author>Narayanachari, K.V.L.V.</author>
      <author>Zhang, Jiaqi</author>
      <author>Garcia-Wetten, David</author>
      <author>Dieguez, Oswaldo</author>
      <author>Hettler, Simon</author>
      <author>Cohen, Assael</author>
      <author>Keane, Denis T.</author>
      <author>Arenal, Raul</author>
      <author>Rondinelli, James M.</author>
      <author>Ismach, Ariel</author>
      <author>Bedzyk, Michael J.</author>
    </authors>
  </contributors>
  <titles>
    <title>Chemistry and Interfacial Structure Promoting Quasi-van der Waals Epitaxial Growth of WS2 Nanosheets on Sapphire for Prospective Application in Field-Effect Transistors</title>
    <secondary-title>ACS appl. nano mater.</secondary-title>
  </titles>
  <doi>10.1021/acsanm.5c00681</doi>
  <pages/>
  <volume/>
  <number/>
  <dates>
    <year>2025</year>
    <pub-dates>
      <date>2025</date>
    </pub-dates>
  </dates>
  <abstract/>
</record>

</records>
</xml>