000168649 001__ 168649
000168649 005__ 20260212205631.0
000168649 0247_ $$2doi$$a10.1109/TIM.2026.3655943
000168649 0248_ $$2sideral$$a148070
000168649 037__ $$aART-2026-148070
000168649 041__ $$aeng
000168649 100__ $$0(orcid)0009-0009-4055-0166$$aEsquíroz-Olloqui, Yago
000168649 245__ $$aEffect of Cryogenic Thermal Stress Cycles on the Performance of Integrated Resistors
000168649 260__ $$c2026
000168649 5203_ $$aCryogenic operation of CMOS circuits is essential for scalable quantum computing and other high-performance applications. Although much research has focused on the behavior of devices at low temperatures, the long-term effects of repeated thermal stress cycles remain largely unexplored. This work investigates the impact of consecutive cooling-heating cycles between 4 K and 280 K on the electrical characteristics of 65 nm CMOS polysilicon resistors with varying sizes and doping types. Using a fully automated cryogenic measurement setup, eight full thermal cycles were applied to three different resistor structures. Resistance vs. temperature (R–T) characteristics were measured in the full temperature range for each cycle. The results reveal the appearance of hysteresis in the curves R–T after thermal cycling, with the most pronounced effects observed in larger devices. In particular, the maximum resistance variation remained below 2 % of the nominal value, a trend that is maintained after repeating the thermal cycle 8 times. These findings suggest that while 65 nm CMOS resistors are suitable for cryogenic electronic systems, care has to be taken when designing high-precision systems depending on the value of resistors such as comparators or data converters.
000168649 540__ $$9info:eu-repo/semantics/closedAccess$$aAll rights reserved$$uhttp://www.europeana.eu/rights/rr-f/
000168649 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion
000168649 700__ $$0(orcid)0000-0002-8617-5703$$aPérez-Bailón, Jorge
000168649 700__ $$0(orcid)0000-0003-0182-7723$$aCelma, Santiago$$uUniversidad de Zaragoza
000168649 700__ $$0(orcid)0000-0002-8236-825X$$aSánchez-Azqueta, Carlos$$uUniversidad de Zaragoza
000168649 7102_ $$12002$$2385$$aUniversidad de Zaragoza$$bDpto. Física Aplicada$$cÁrea Física Aplicada
000168649 7102_ $$15008$$2250$$aUniversidad de Zaragoza$$bDpto. Ingeniería Electrón.Com.$$cÁrea Electrónica
000168649 773__ $$g(2026), [4 pp.]$$pIEEE trans. instrum. meas.$$tIEEE Transactions on Instrumentation and Measurement$$x0018-9456
000168649 8564_ $$s1235485$$uhttps://zaguan.unizar.es/record/168649/files/texto_completo.pdf$$yVersión publicada
000168649 8564_ $$s3167395$$uhttps://zaguan.unizar.es/record/168649/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada
000168649 909CO $$ooai:zaguan.unizar.es:168649$$particulos$$pdriver
000168649 951__ $$a2026-02-12-20:38:44
000168649 980__ $$aARTICLE