168649 20260217205612.0 doi 10.1109/TIM.2026.3655943 sideral 148070 ART-2026-148070 eng Esquíroz-Olloqui, Yago (orcid)0009-0009-4055-0166 Effect of Cryogenic Thermal Stress Cycles on the Performance of Integrated Resistors 2026 Access copy available to the general public Unrestricted Cryogenic operation of CMOS circuits is essential for scalable quantum computing and other high-performance applications. Although much research has focused on the behavior of devices at low temperatures, the long-term effects of repeated thermal stress cycles remain largely unexplored. This work investigates the impact of consecutive cooling-heating cycles between 4 K and 280 K on the electrical characteristics of 65 nm CMOS polysilicon resistors with varying sizes and doping types. Using a fully automated cryogenic measurement setup, eight full thermal cycles were applied to three different resistor structures. Resistance vs. temperature (R–T) characteristics were measured in the full temperature range for each cycle. The results reveal the appearance of hysteresis in the curves R–T after thermal cycling, with the most pronounced effects observed in larger devices. In particular, the maximum resistance variation remained below 2 % of the nominal value, a trend that is maintained after repeating the thermal cycle 8 times. These findings suggest that while 65 nm CMOS resistors are suitable for cryogenic electronic systems, care has to be taken when designing high-precision systems depending on the value of resistors such as comparators or data converters. info:eu-repo/semantics/openAccess All rights reserved http://www.europeana.eu/rights/rr-f/ info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion Pérez-Bailón, Jorge (orcid)0000-0002-8617-5703 Celma, Santiago Universidad de Zaragoza (orcid)0000-0003-0182-7723 Sánchez-Azqueta, Carlos Universidad de Zaragoza (orcid)0000-0002-8236-825X 2002 385 Universidad de Zaragoza Dpto. Física Aplicada Área Física Aplicada 5008 250 Universidad de Zaragoza Dpto. Ingeniería Electrón.Com. Área Electrónica (2026), [4 pp.] IEEE trans. instrum. meas. IEEE Transactions on Instrumentation and Measurement 0018-9456 1176767 http://zaguan.unizar.es/record/168649/files/texto_completo.pdf Postprint 2939904 http://zaguan.unizar.es/record/168649/files/texto_completo.jpg?subformat=icon icon Postprint oai:zaguan.unizar.es:168649 articulos driver 2026-02-17-20:49:30 ARTICLE