171063 20260505142650.0 doi 10.1088/1361-6463/ae5dde sideral 149147 ART-2026-149147 eng Morales-Aragonés, José Ignacio Ultrathin tungsten films enabling enhanced electrical response to spin currents 2026 The efficient detection of spin currents is crucial for the development of next-generation spintronic devices. Here, we demonstrate that ultrathin W layers, with thicknesses down to 2 nm—equivalent to only four atomic planes—allow for highly efficient spin-to-charge conversion. From spin pumping experiments in YIG/W bilayers, we analyzed the inverse spin Hall effect (SHE) voltage dependence on W thickness and extracted a spin Hall conductivity of σSH = −1.14(6) × 105 Ω −1 m−1, yielding effective spin Hall angles ranging from −0.27(4) to −0.88(4) over the investigated thickness range. Furthermore, assuming the Elliott–Yafet spin scattering mechanism dominates, we estimate a spin diffusion length λsd = 4.3(5) × 10−15Ωm2/ρW, where the W resistivity ρW is strongly dependent on thickness. Structural characterization, together with roomtemperature electrical resistivity measurements and the high spin-to-charge conversion efficiency observed, confirms the stabilization of the β-phase in these ultrathin W layers. We demonstrate that the monotonic increase of the inverse SHE voltage with decreasing W thickness persists down to 2-nm-thick W layer, reflecting the extremely short spin diffusion length. This allows for efficient spin-current detection in W layers below 5 nm, effectively doubling the voltage output at half the thickness. In the thinnest sample, a continuous 2-nm-thick W layer, the generated voltage exceeds 0.5 mV—well within the operating range of conventional electronics. These findings demonstrate not only the feasibility of spin-current detection in ultrathin W, but also its compatibility with conventional electronics. They highlight the strong potential of integrating ultrathin W layers with high-quality YIG films for the development of energy-efficient spintronic devices and sensors. Access copy available to the general public Unrestricted info:eu-repo/grantAgreement/ES/AEI/PID2023-146451OB-I00 info:eu-repo/grantAgreement/ES/AEI/PID2023-150244OB-I00 info:eu-repo/grantAgreement/ES/DGA/E13-23R info:eu-repo/grantAgreement/ES/DGA/E29-24 info:eu-repo/grantAgreement/ES/DGA/T33-24 info:eu-repo/grantAgreement/ES/MCIU/PID2020-112914RB-I00 info:eu-repo/grantAgreement/ES/MICIU/PID2021-122511OB-I00 info:eu-repo/grantAgreement/ES/MICIU/PID2024-155708OB-I00 info:eu-repo/semantics/openAccess by https://creativecommons.org/licenses/by/4.0/deed.es info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion Groen, Inge Hueso, Luis E Casanova, Fèlix Pardo, José Ángel Universidad de Zaragoza (orcid)0000-0002-0111-8284 Sánchez-Azqueta, Carlos Universidad de Zaragoza (orcid)0000-0002-8236-825X De Teresa, José María (orcid)0000-0001-9566-0738 Sangiao, Soraya Universidad de Zaragoza (orcid)0000-0002-4123-487X 2002 385 Universidad de Zaragoza Dpto. Física Aplicada Área Física Aplicada 5001 065 Universidad de Zaragoza Dpto. Ciencia Tecnol.Mater.Fl. Área Cienc.Mater. Ingen.Metal. 2003 395 Universidad de Zaragoza Dpto. Física Materia Condensa. Área Física Materia Condensada 59, 17 (2026), 175301 [13 pp.] J. phys., D. Appl. phys. Journal of physics. D, Applied physics 0022-3727 1167262 http://zaguan.unizar.es/record/171063/files/texto_completo.pdf Versión publicada 707757 http://zaguan.unizar.es/record/171063/files/texto_completo.jpg?subformat=icon icon Versión publicada oai:zaguan.unizar.es:171063 articulos driver 2026-05-05-13:36:54 ARTICLE