000032216 001__ 32216
000032216 005__ 20210121082857.0
000032216 0247_ $$2doi$$a10.1103/PhysRevB.92.094428
000032216 0248_ $$2sideral$$a92273
000032216 037__ $$aART-2015-92273
000032216 041__ $$aeng
000032216 100__ $$aGalceran, R.
000032216 245__ $$aInterfacial effects on the tunneling magnetoresistance in La0.7 S r0.3Mn O3/MgO/Fe tunneling junctions
000032216 260__ $$c2015
000032216 5060_ $$aAccess copy available to the general public$$fUnrestricted
000032216 5203_ $$aWe report on magnetotransport properties on La0.7Sr0.3MnO3/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO3 substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by the interface destroys the ¿1 symmetry filtering effect of the MgO/Fe system and only a small negative tunneling magnetoresistance (TMR) (~-3%) is measured. However, in annealed samples a switchover from positive TMR (~+25% at 70 K) to negative TMR (~-1%) is observed around 120 K. This change is associated with the transition from semiconducting at high T to insulating at low T taking place at the Verwey transition (TV~120K) in Fe3O4, thus suggesting the formation of a very thin slab of magnetite at the MgO/Fe interface during annealing treatments. These results highlight the relevance of interfacial properties on the tunneling conduction process and how it can be substantially modified through appropriate interface engineering.
000032216 536__ $$9info:eu-repo/grantAgreement/ES/MINECO/MAT2012-37638$$9info:eu-repo/grantAgreement/ES/MINECO/MAT2012-33207$$9info:eu-repo/grantAgreement/ES/MINECO/MAT2011-27470-C02$$9info:eu-repo/grantAgreement/ES/MINECO/Consolider-Ingenio2010-CSD2009-00013$$9info:eu-repo/grantAgreement/EC/FP7/256470/EU/Injection, transport and manipulation of spin currents in new organic materials/ITAMOSCINOM
000032216 540__ $$9info:eu-repo/semantics/openAccess$$aAll rights reserved$$uhttp://www.europeana.eu/rights/rr-f/
000032216 590__ $$a3.718$$b2015
000032216 591__ $$aPHYSICS, CONDENSED MATTER$$b16 / 67 = 0.239$$c2015$$dQ1$$eT1
000032216 592__ $$a2.377$$b2015
000032216 593__ $$aElectronic, Optical and Magnetic Materials$$c2015$$dQ1
000032216 593__ $$aCondensed Matter Physics$$c2015$$dQ1
000032216 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion
000032216 700__ $$aBalcells, L.
000032216 700__ $$aMartinez-Boubeta, C.
000032216 700__ $$aBozzo, B.
000032216 700__ $$aCisneros-Fernández, J.
000032216 700__ $$aMata, De La
000032216 700__ $$0(orcid)0000-0002-6761-6171$$aMagén, C.$$uUniversidad de Zaragoza
000032216 700__ $$aArbiol, J.
000032216 700__ $$aTornos, J.
000032216 700__ $$aCuellar, F.A.
000032216 700__ $$aSefrioui, Z.
000032216 700__ $$aCebollada, A.
000032216 700__ $$aGolmar, F.
000032216 700__ $$aHueso, L.E.
000032216 700__ $$aCasanova, F.
000032216 700__ $$aSantamaría, J.
000032216 700__ $$aMartinez, B.
000032216 7102_ $$12003$$2395$$aUniversidad de Zaragoza$$bDpto. Física Materia Condensa.$$cÁrea Física Materia Condensada
000032216 773__ $$g92, 9 (2015), 094428 [7 pp]$$pPhys. Rev. B, Condens. matter mater. phys.$$tPhysical Review B$$x1098-0121
000032216 8564_ $$s901795$$uhttps://zaguan.unizar.es/record/32216/files/texto_completo.pdf$$yVersión publicada
000032216 8564_ $$s126980$$uhttps://zaguan.unizar.es/record/32216/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada
000032216 909CO $$ooai:zaguan.unizar.es:32216$$particulos$$pdriver
000032216 951__ $$a2021-01-21-08:13:57
000032216 980__ $$aARTICLE