000057876 001__ 57876
000057876 005__ 20190520103317.0
000057876 0247_ $$2doi$$a10.1039/C4NR02933J
000057876 0248_ $$2sideral$$a85951
000057876 037__ $$aART-2014-85951
000057876 041__ $$aeng
000057876 100__ $$aWimbush, Kim S.
000057876 245__ $$aBias Induced Transition from an Ohmic to a Non-Ohmic Interface in Supramolecular Tunneling Junctions with Ga2O3/EGaIn Top Electrodes
000057876 260__ $$c2014
000057876 5060_ $$aAccess copy available to the general public$$fUnrestricted
000057876 5203_ $$aThis study describes that the current rectification ratio, R = |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ~2.0 nm changed the nature of the monolayer–top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.
000057876 540__ $$9info:eu-repo/semantics/openAccess$$aby-nc$$uhttp://creativecommons.org/licenses/by-nc/3.0/es/
000057876 590__ $$a7.394$$b2014
000057876 591__ $$aMATERIALS SCIENCE, MULTIDISCIPLINARY$$b21 / 260 = 0.081$$c2014$$dQ1$$eT1
000057876 591__ $$aNANOSCIENCE & NANOTECHNOLOGY$$b10 / 80 = 0.125$$c2014$$dQ1$$eT1
000057876 591__ $$aCHEMISTRY, MULTIDISCIPLINARY$$b19 / 157 = 0.121$$c2014$$dQ1$$eT1
000057876 591__ $$aPHYSICS, APPLIED$$b12 / 144 = 0.083$$c2014$$dQ1$$eT1
000057876 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion
000057876 700__ $$0(orcid)0000-0001-5559-8757$$aFratila, Raluca M.$$uUniversidad de Zaragoza
000057876 700__ $$aWang, Dandan
000057876 700__ $$aQi, Dongchen
000057876 700__ $$aLiang, Cao
000057876 700__ $$aYuan, Li
000057876 700__ $$aYakovlev, Nikolai
000057876 700__ $$aLoh, Kian Ping
000057876 700__ $$aReinhoudt, David N.
000057876 700__ $$aVelders, Aldrik H.
000057876 700__ $$aNijhuis, Christian A.
000057876 7102_ $$12013$$2765$$aUniversidad de Zaragoza$$bDpto. Química Orgánica$$cÁrea Química Orgánica
000057876 773__ $$g6, 19 (2014), 11246-58$$pNanoscale$$tNANOSCALE$$x2040-3364
000057876 8564_ $$s390251$$uhttps://zaguan.unizar.es/record/57876/files/texto_completo.pdf$$yVersión publicada
000057876 8564_ $$s111587$$uhttps://zaguan.unizar.es/record/57876/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada
000057876 909CO $$ooai:zaguan.unizar.es:57876$$particulos$$pdriver
000057876 951__ $$a2019-05-20-10:30:24
000057876 980__ $$aARTICLE