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<dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:invenio="http://invenio-software.org/elements/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:identifier>doi:10.1103/PhysRevB.95.184437</dc:identifier><dc:language>eng</dc:language><dc:creator>Uchida, K.</dc:creator><dc:creator>Iguchi, R.</dc:creator><dc:creator>Daimon, S.</dc:creator><dc:creator>Ramos, R.</dc:creator><dc:creator>Anadón, A.</dc:creator><dc:creator>Lucas, I.</dc:creator><dc:creator>Algarabel, P.A.</dc:creator><dc:creator>Morellón, L.</dc:creator><dc:creator>Aguirre, M.H.</dc:creator><dc:creator>Ibarra, M.R.</dc:creator><dc:creator>Saitoh, E.</dc:creator><dc:title>Enhancement of the spin Peltier effect in multilayers</dc:title><dc:identifier>ART-2017-100329</dc:identifier><dc:description>The spin Peltier effect (SPE), heat-current generation as a result of spin-current injection, has been investigated in alternately stacked Pt/Fe3O4 multilayer films. The temperature modulation induced by the SPE in the [Pt/Fe3O4] × n films was found to be significantly enhanced with increasing the number of Pt/Fe3O4 bilayers n. This SPE enhancement is much greater than that expected for a simple stack of independent Pt/Fe3O4 bilayers. The observed n dependence of the SPE can be explained by introducing spin-current redistribution in the multilayer films in the thickness direction, in a manner similar to the enhancement of the spin Seebeck effect in multilayers.</dc:description><dc:date>2017</dc:date><dc:source>http://zaguan.unizar.es/record/61833</dc:source><dc:doi>10.1103/PhysRevB.95.184437</dc:doi><dc:identifier>http://zaguan.unizar.es/record/61833</dc:identifier><dc:identifier>oai:zaguan.unizar.es:61833</dc:identifier><dc:relation>info:eu-repo/grantAgreement/ES/MINECO/MAT2014-51982-C-R</dc:relation><dc:relation>This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No H2020 734187-SPICOLOST</dc:relation><dc:relation>info:eu-repo/grantAgreement/EC/H2020/734187/EU/Spin conversion, logic storage in oxide-based electronics/SPICOLOST</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/DGA/E26</dc:relation><dc:identifier.citation>Physical Review B 95 (2017), 184437 [8 pp.]</dc:identifier.citation><dc:rights>by-nc</dc:rights><dc:rights>http://creativecommons.org/licenses/by-nc/3.0/es/</dc:rights><dc:rights>info:eu-repo/semantics/openAccess</dc:rights></dc:dc>

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