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<dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:invenio="http://invenio-software.org/elements/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:identifier>doi:10.1016/j.proeng.2016.11.483</dc:identifier><dc:language>eng</dc:language><dc:creator>Perez-Bailon, J.</dc:creator><dc:creator>Marquez, A.</dc:creator><dc:creator>Calvo, B.</dc:creator><dc:creator>Medrano, N.</dc:creator><dc:creator>Martinez, P.A.</dc:creator><dc:creator>Sanz-Pascual, M.T.</dc:creator><dc:title>A Fully-Integrated CMOS LDO Regulator for Battery-Operated On-Chip Measurement Systems</dc:title><dc:identifier>ART-2016-106035</dc:identifier><dc:description>This paper presents a fully-integrated 0.18 mu m CMOS low drop-out (LDO) regulator designed to drive on-chip low power frontend sensor nodes. The proposed LDO is based on a simple telescopic amplifier stage with internal cascode compensation driving a PMOS pass-device, providing a high precision 1.8 V output voltage for input voltages from 3.6 V to 1.92 V up to a 50 mA load current with only 22 mu A quiescent current. Line and load regulation are respectively better than 0.017 mV/V and 0.003 mV/mA, while recovery times are below 4 mu s over a (-40 degrees C, 120 degrees C) temperature span.</dc:description><dc:date>2016</dc:date><dc:source>http://zaguan.unizar.es/record/70668</dc:source><dc:doi>10.1016/j.proeng.2016.11.483</dc:doi><dc:identifier>http://zaguan.unizar.es/record/70668</dc:identifier><dc:identifier>oai:zaguan.unizar.es:70668</dc:identifier><dc:relation>info:eu-repo/grantAgreement/ES/MINECO-FEDER/TEC2015-65750-R</dc:relation><dc:identifier.citation>Procedia Engineering 168 (2016), 1655-1658</dc:identifier.citation><dc:rights>by-nc-nd</dc:rights><dc:rights>http://creativecommons.org/licenses/by-nc-nd/3.0/es/</dc:rights><dc:rights>info:eu-repo/semantics/openAccess</dc:rights></dc:dc>

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