74960 20200117221633.0 doi 10.1038/s41598-018-29220-0 sideral 107671 ART-2018-107671 eng Kyndiah, A. A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors 2018 Access copy available to the general public Unrestricted Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In2O3 thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies. info:eu-repo/semantics/openAccess by-nc-nd http://creativecommons.org/licenses/by-nc-nd/3.0/es/ 4.011 2018 MULTIDISCIPLINARY SCIENCES 14 / 69 = 0.203 2018 Q1 T1 1.414 2018 Multidisciplinary 2018 Q1 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion Ablat, A. Guyot-Reeb, S. Schultz, T. Zu, F. Koch, N. Amsalem, P. Chiodini, S. Universidad de Zaragoza Yilmaz Alic, T. Topal, Y. Kus, M. Hirsch, L. Fasquel, S. Abbas, M. 2012 755 Universidad de Zaragoza Dpto. Química Física Área Química Física 8, 1 (2018), 10946 Sci. rep. SCIENTIFIC REPORTS 2045-2322 1980928 http://zaguan.unizar.es/record/74960/files/texto_completo.pdf Versión publicada 108263 http://zaguan.unizar.es/record/74960/files/texto_completo.jpg?subformat=icon icon Versión publicada oai:zaguan.unizar.es:74960 articulos driver 2020-01-17-22:00:44 ARTICLE