doi:10.1103/PhysRevMaterials.2.013401engTorrejón, LuisLangenberg, EricMagén, CésarLarrea, ÁngelBlasco, JavierSantiso, JoséAlgarabel, Pedro A.Pardo, José ÁngelGrowth and structural characterization of strained epitaxial Hf0.5Zr0.5O2 thin filmsART-2018-104005Ferroelectricity was recently reported in thin films with several compositions in the HfO2-ZrO2 system with orthorhombic crystal structure. In the present paper we study the growth by pulsed laser deposition and the structural characterization of strained epitaxial Hf0.5 Zr0.5 O2 films on (001)-oriented yttria-stabilized zirconia (YSZ) substrates. We have determined the conditions for the coherent growth and correlated the deposition parameters with the films structure and microstructure studied through a combination of x-ray diffraction, electron backscatter diffraction, and scanning transmission electron microscopy. In the range of experimental parameters explored, all the films show monoclinic structure with distorted lattice parameters relative to bulk.2018http://zaguan.unizar.es/record/7610110.1103/PhysRevMaterials.2.013401http://zaguan.unizar.es/record/76101oai:zaguan.unizar.es:76101info:eu-repo/grantAgreement/ES/MINECO/MAT2014-51982-C2info:eu-repo/grantAgreement/ES/MINECO/MAT2015-68760-C2-1-Pinfo:eu-repo/grantAgreement/ES/MINECO/MAT2017-82970-C2Physical Review Materials 2, 1 (2018), 013401 [7 pp.]All rights reservedhttp://www.europeana.eu/rights/rr-f/info:eu-repo/semantics/openAccess