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<dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:invenio="http://invenio-software.org/elements/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:identifier>doi:10.1063/1.5063553</dc:identifier><dc:language>eng</dc:language><dc:creator>Ramos, R.</dc:creator><dc:creator>Kikkawa, T.</dc:creator><dc:creator>Anadón, A.</dc:creator><dc:creator>Lucas, I.</dc:creator><dc:creator>Niizeki, T.</dc:creator><dc:creator>Uchida, K.</dc:creator><dc:creator>Algarabel, P.A.</dc:creator><dc:creator>Morellón, L.</dc:creator><dc:creator>Aguirre, M.H.</dc:creator><dc:creator>Ibarra, M.R.</dc:creator><dc:creator>Saitoh, E.</dc:creator><dc:title>Interface-induced anomalous Nernst effect in Fe 3 O 4 /Pt-based heterostructures</dc:title><dc:identifier>ART-2019-111195</dc:identifier><dc:description>We have studied the anomalous Nernst effect (ANE) in [Fe 3 O 4 /Pt]-based heterostructures grown at high temperature, by measuring the ANE-induced electric field with a magnetic field applied normal to the sample surface, in the perpendicular magnetized configuration, where only the ANEs from the ferromagnetic layers or magnetic proximity effects can be detected. An ANE voltage is observed for [Fe 3 O 4 /Pt] n multilayers, and we further investigated its origin by performing measurements in [Fe 3 O 4 /Pt/Fe 3 O 4 ] trilayers as a function of the Pt thickness. Our results suggest the presence of an interface-induced ANE in the metallic layer, possibly driven by a heat induced subnanometer interdiffusion which affects the nature of the Fe 3 O 4 /Pt interface. Despite this ANE, the spin Seebeck effect is the dominant mechanism for the transverse thermoelectric voltage in the in-plane magnetized configuration, accounting for about 70% of the voltage in the multilayers.</dc:description><dc:date>2019</dc:date><dc:source>http://zaguan.unizar.es/record/78840</dc:source><dc:doi>10.1063/1.5063553</dc:doi><dc:identifier>http://zaguan.unizar.es/record/78840</dc:identifier><dc:identifier>oai:zaguan.unizar.es:78840</dc:identifier><dc:relation>info:eu-repo/grantAgreement/ES/MINECO/FIS2016-78591-C3-1-R-SKYTRON</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MINECO-FEDER/MAT2017-82970-C2</dc:relation><dc:relation>This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No H2020 737116-ByAXON</dc:relation><dc:relation>info:eu-repo/grantAgreement/EUR/H2020/737116-ByAXON</dc:relation><dc:relation>This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No H2020 734187-SPICOLOST</dc:relation><dc:relation>info:eu-repo/grantAgreement/EC/H2020/734187/EU/Spin conversion, logic storage in oxide-based electronics/SPICOLOST</dc:relation><dc:relation>This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No H2020 FLAG ERA Graphene Flagship PCIN-2015-111 SOgraph</dc:relation><dc:relation>info:eu-repo/grantAgreement/EUR/H2020/FLAG ERA Graphene Flagship PCIN-2015-111 SOgraph</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/DGA/E26</dc:relation><dc:identifier.citation>Applied Physics Letters 114, 11 (2019), 113902</dc:identifier.citation><dc:rights>All rights reserved</dc:rights><dc:rights>http://www.europeana.eu/rights/rr-f/</dc:rights><dc:rights>info:eu-repo/semantics/openAccess</dc:rights></dc:dc>

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