Low-Loss EELS Investigations on Atomically Thin MoxW(1-x)S2 Nanoflakes for Delving into Their Optoelectronic Properties

Pelaez-Fernandez, M. (Universidad de Zaragoza) ; Lin, Y.C. ; Suenaga, K. ; Arenal, R. (Universidad de Zaragoza)

Resumen: For more than a decade, the scientific community has developed a broadening interest in atomically thin 2D materials; due to their attractive mechanical, thermal and electronic properties. Within this family of materials, transition metal dichalcogenides (TMD) have been on the peak of this research interest lately. These materials present a TX2 type where T is a transition metal of groups IV, V or VI, and X stands for a chalcogen (S, Se or Te).
Focusing on their electronic properties, a point of great interest application-wise is band gap tuning. In bulk, materials, one of the major techniques used for this purpose consists on alloying materials with different band gaps. Up until now, the only atomically thin alloy types reported for TMDs have been of the MoxW(1-x)Se2 or the MoXW(1-X)S2. For the second one, evidence of a band gap shift with the alloying degree in monolayers has been found. This evidence is supported both theoretically (by density functional theory (DFT)) and experimentally (via photoluminescence)...

Idioma: Inglés

DOI: 10.1017/S143192761800836X

Año: 2018

Publicado en: MICROSCOPY AND MICROANALYSIS 24, S1 (2018), 1576-1577
ISSN: 1431-9276

Factor impacto JCR: 2.673 (2018)

Categ. JCR: MICROSCOPY rank: 1 / 9 = 0.111 (2018) - Q1 - T1
Categ. JCR: MATERIALS SCIENCE, MULTIDISCIPLINARY rank: 122 / 293 = 0.416 (2018) - Q2 - T2

Factor impacto SCIMAGO: 0.437 - Instrumentation (Q2)

Tipo y forma: Article (Published version)

Área (Departamento): Área Física Materia Condensada (Dpto. Física Materia Condensa.)