Structural characterization of Graphene Oxide and Reduced Graphene Oxide used as counter electrode in flexible DSSC

Hurtado-Morales, M. ; Pazos-Alonso, J.E. ; Garcia-Fox, M.A. ; Castarlenas, S. ; Tellez, C. (Universidad de Zaragoza) ; Coronas, J. (Universidad de Zaragoza)

Resumen: Graphene oxide (GO) and reduced graphene oxide (RGO) were synthesized from commercial graphite GR5 type, using the oxidative exhaustive exfoliation method or Hummers process. The characterization of GO and RGO allows ensuring the successful oxidation and reduction processes. Thin films of these materials were prepared and their electric properties were checked. The sheet resistance for GO films was 0.028 k}}W \mathbf{sq} {mathbf{-1}}on polyethylene terephthalate (PET) substrate, and 0.160 k}W \mathbf{sq} {mathbf{-1}}on soda lime glass (SLG) substrate. When RGO was used sheet resistance response increase to 0.391 k}W \mathbf{sq} {mathbf{-1}}on PET substrate and 0.413 k}W \mathbf{sq} {mathbf{-1}} on glass substrate. RGO and GO thin films were prepared by blade coating technique and used to prepare Dye Sensitized Solar Cells (DSSC) or Gr\{a}tzel cells acting as counter electrodes, being a ruthenium complex as dye and iodide-triiodide electrolyte as couple redox. In standard illumination conditions the efficiency was measured with different dye concentration. The best results were found for a dye sensitized solar cell device PET/GO, with photovoltaic performance (PV)}h = 0.25% (one TDBR coat) and for a DSSC device PET/RGO}h = 0.20% (three TDBR coats).

Idioma: Inglés

DOI: 10.1109/PVSC.2018.8548212

Año: 2018

Publicado en: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC 18288467 (2018), 1116 - 1121
ISSN: 2159-2330

Financiación: info:eu-repo/grantAgreement/ES/DGA-CAIXA/GA-LC-019-2011
Financiación: info:eu-repo/grantAgreement/ES/MINECO/MAT2010-15870

Tipo y forma: Artículo (PostPrint)

Área (Departamento): Área Ingeniería Química (Dpto. Ing.Quím.Tecnol.Med.Amb.)