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<dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:invenio="http://invenio-software.org/elements/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:identifier>doi:10.1002/adfm.201901984</dc:identifier><dc:language>eng</dc:language><dc:creator>Ferreiro-Vila, E.</dc:creator><dc:creator>Blanco-Canosa, S.</dc:creator><dc:creator>Lucas del Pozo, I.</dc:creator><dc:creator>Vasili, H.B.</dc:creator><dc:creator>Magén, C.</dc:creator><dc:creator>Ibarra, A.</dc:creator><dc:creator>Rubio-Zuazo, J.</dc:creator><dc:creator>Castro, G.R.</dc:creator><dc:creator>Morellón, L.</dc:creator><dc:creator>Rivadulla, F.</dc:creator><dc:title>Room-Temperature AFM Electric-Field-Induced Topotactic Transformation between Perovskite and Brownmillerite SrFeOx with Sub-Micrometer Spatial Resolution</dc:title><dc:identifier>ART-2019-115887</dc:identifier><dc:description>Reversible structural transformations between perovskite (PV) ABO3- d and brownmillerite (BM) ABO2.5 (A = Ca2+, Sr2+; B = Fe4+/3, Co4+/3+) oxides can be induced by topotactic oxygen exchange at moderate temperatures under reducing/oxidizing conditions. The combination of a large oxide-ion conductivity and a small free energy difference between the 4+/3+ oxidation states of many 3d transition metal ions enables these topotactic transformations. Herein, it is demonstrated that the electric field produced by a voltage-biased atomic force microscopy tip can induce such transformation between PV SrFeO3- d and BM SrFeO2.5 at room temperature and with sub-micrometer spatial resolution. Interestingly, the structural transformation is kept after the electric field is removed, allowing a nonvolatile control of the local chemical, electrical, optical, and magnetic properties. Thus, the results presented in this paper open the door for the fabrication of stable ionic-based devices through the electric field patterning of different crystallographic phases.</dc:description><dc:date>2019</dc:date><dc:source>http://zaguan.unizar.es/record/88493</dc:source><dc:doi>10.1002/adfm.201901984</dc:doi><dc:identifier>http://zaguan.unizar.es/record/88493</dc:identifier><dc:identifier>oai:zaguan.unizar.es:88493</dc:identifier><dc:relation>info:eu-repo/grantAgreement/EC/H2020/734187/EU/Spin conversion, logic storage in oxide-based electronics/SPICOLOST</dc:relation><dc:relation>This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No H2020 734187-SPICOLOST</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MINECO/MAT2016-80762-R</dc:relation><dc:relation>info:eu-repo/grantAgreement/ES/MINECO/MAT2017-82970-C2-2-R</dc:relation><dc:identifier.citation>Advanced Functional Materials 29, 48 (2019), 1901984 [8 pp]</dc:identifier.citation><dc:rights>by-nc</dc:rights><dc:rights>http://creativecommons.org/licenses/by-nc/3.0/es/</dc:rights><dc:rights>info:eu-repo/semantics/openAccess</dc:rights></dc:dc>

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