Mechanisms of Spontaneous and Amplified Spontaneous Emission in CH3 NH3 Pb I3 Perovskite Thin Films Integrated in an Optical Waveguide

Suárez, I. ; Juárez-Pérez, E.J. (Universidad de Zaragoza) ; Chirvony, V.S. ; Mora-Seró, I. ; Martínez-Pastor, J.P.

Resumen: In this paper, the physical mechanisms responsible for optical gain in CH3NH3PbI3 (MAPI) polycrystalline thin films are investigated experimentally and theoretically. Waveguide structures composed by a MAPI film embedded in between PMMA and silica layers are used as an efficient geometry to confine emitted light in MAPI films and minimize the energy threshold for amplified spontaneous emission (ASE). We show that photogenerated exciton density at the ASE threshold is as low as (2.4-12)×1016cm-3, which is below the Mott transition density reported for this material and the threshold transparency condition deduced with the free-carrier model. Such a low threshold indicates that the formation of excitons plays an important role in the generation of optical gain in MAPI films. The rate-equation model including gain is incorporated into a beam-propagation algorithm to describe waveguided spontaneous emission and ASE in MAPI films, while using the optical parameters experimentally determined in this work. This model is a useful tool to design active photonic devices based on MAPI and other metal-halide semiconductors.

Idioma: Inglés

DOI: 10.1103/PHYSREVAPPLIED.13.064071

Año: 2020

Publicado en: Physical Review Applied 13, 6 (2020), 064071 [15 pp]
ISSN: 2331-7019

Factor impacto JCR: 4.985 (2020)

Categ. JCR: PHYSICS, APPLIED rank: 36 / 160 = 0.225 (2020) - Q1 - T1

Factor impacto SCIMAGO: 1.883 - Physics and Astronomy (miscellaneous) (Q1)

Financiación: info:eu-repo/grantAgreement/EC/H2020/724424/EU/Boosting Photovoltaic Performance by the Synergistic Interaction of Halide Perovskites and Semiconductor Quantum Dots/No-LIMIT
Financiación: info:eu-repo/grantAgreement/ES/MICINN/TEC2017-86102-C2-1-R
Financiación: info:eu-repo/grantAgreement/ES/MINECO/ENE2017-90565-REDT

Tipo y forma: Artículo (Versión definitiva)

Área (Departamento): Área Ingeniería Química (Dpto. Ing.Quím.Tecnol.Med.Amb.)