Estadisticas : Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates Szkudlarek, Aleksandra Visitas:314 212 ( Estados Unidos de América ) 32 ( Singapur ) 27 ( Hong kong ) 14 ( Reino Unido ) 7 ( Letonia ) 6 ( Irlanda ) 5 ( Alemania ) 4 ( Austria ) 2 ( Rusia ) 2 ( Finlandia ) 1 ( Francia ) 1 ( Bulgaria ) 1 ( China ) Descargas: 113
212 ( Estados Unidos de América ) 
32 ( Singapur ) 
27 ( Hong kong ) 
14 ( Reino Unido ) 
7 ( Letonia ) 
6 ( Irlanda ) 
5 ( Alemania ) 
4 ( Austria ) 
2 ( Rusia ) 
2 ( Finlandia ) 
1 ( Francia ) 
1 ( Bulgaria ) 
1 ( China )