Estadisticas : Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates Szkudlarek, Aleksandra
Visitas:678
428 ( Estados Unidos de América )
104 ( Singapur )
41 ( Hong kong )
19 ( Reino Unido )
14 ( Letonia )
12 ( Irlanda )
10 ( Alemania )
8 ( Brasil )
8 ( Canadá )
6 ( Francia )
5 ( Austria )
4 ( China )
3 ( Finlandia )
2 ( Japón )
2 ( Rusia )
2 ( España )
1 ( Bangladesh )
1 ( Bélgica )
1 ( Bulgaria )
1 ( Jamaica )
1 ( Suiza )
1 ( Italia )
1 ( Vietnam )
1 ( Australia )
1 ( Indonesia )
1 ( Arabia Saudita )
Descargas: 221