Cryogenic measurement of CMOS devices for quantum technologies

Pérez-Bailón, Jorge ; Tarancón, Miguel ; Celma, Santiago (Universidad de Zaragoza) ; Sánchez-Azqueta, Carlos (Universidad de Zaragoza)

Resumen: In this article we present the experimental characterization of active components of a standard 65 nm CMOS technology for a temperature range from 313 to 5 K, analyzing the variation of the main parameters over temperature and voltage, recovering their main parameters (threshold voltage Vth , transconductance Gm and channel conductance GDS ). The measurement has been carried out wire-bonding the bare dies with the devices to a dedicated printed circuit board (PCB) that has been placed inside a dilution refrigerator. The ID - VDS curves for both NMOS and PMOS transistors shows an increase of ID in the cryogenic regime that is more relevant for high values of VGS because for lower values it is partially compensated by the variation of Vth . Also, a kink is observed in these curves for high VDS values, caused by the bulk current generated by impact ionization at the drain combined with the increased resistivity of the frozen-out substrate. The transconductance Gm reaches non-zero values for higher VGS as T decreases and then peaks to higher values in the cryogenic regime. In turn, GDS increases for increasing T , following the behavior observed for ID . Both results are in accordance with other thermal characterizations carried out on CMOS transistors in different technologies.

Idioma: Inglés

DOI: 10.1109/TIM.2023.3325446

Año: 2023

Publicado en: IEEE Transactions on Instrumentation and Measurement 72 (2023), 1504007 [7 pp.]
ISSN: 0018-9456

Factor impacto JCR: 5.6 (2023)

Categ. JCR: INSTRUMENTS & INSTRUMENTATION rank: 9 / 76 = 0.118 (2023) - Q1 - T1
Categ. JCR: ENGINEERING, ELECTRICAL & ELECTRONIC rank: 53 / 353 = 0.15 (2023) - Q1 - T1

Factor impacto CITESCORE: 9.0 - Electrical and Electronic Engineering (Q1) - Instrumentation (Q1)

Factor impacto SCIMAGO: 1.536 - Instrumentation (Q1) - Electrical and Electronic Engineering (Q1)

Financiación: info:eu-repo/grantAgreement/ES/AEI/PID2020-114110RA-I00

Tipo y forma: Article (PostPrint)

Área (Departamento): Área Física Aplicada (Dpto. Física Aplicada)
Área (Departamento): Área Electrónica (Dpto. Ingeniería Electrón.Com.)