Improved polarization-retention-endurance in Hf0.5Zr0.5O2 films by ZrO2 capping via electrostatic effects

Song, Tingfeng ; Koutsogiannis, Panagiotis ; Magén, César (Universidad de Zaragoza) ; Pardo, José A. (Universidad de Zaragoza) ; Sánchez, Florencio ; Fina, Ignasi

Resumen: Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile memory devices. Several strategies have demonstrated to be of interest to improve its functional properties. Interface engineering, realized by the introduction of additional layer in the capacitor structure, is demonstrated as a promising strategy. However, interface layers can have multiple implications, such as changes in the chemistry of the interfaces and an increase of depolarization field, whose effects are difficult to discriminate. The role of HfO2 and ZrO2 capping is explored on polarization, retention, endurance, and leakage properties of Hf0.5Zr0.5O2 epitaxial films. In HfO2 capped films, lower polarization is observed, and endurance and retention are also comparably worse than in ZrO2 capped films. Complementary under illumination ferroelectric characterization and capacitance measurements indicate a reduction of defects and interface capacitance contribution in ZrO2 capped films. For both cappings, the interfaces with the Hf0.5Zr0.5O2 layer are shown to be compositionally sharp and the phase of Hf0.5Zr0.5O2 (HZO) grains is replicated on the capping layer, indicating that electrostatic effects prevail and that the use of interface layers with high permittivity, here ZrO2, is crucial to favor good functional properties.

Idioma: Inglés

DOI: 10.1002/aelm.202300509

Año: 2023

Publicado en: Advanced Electronic Materials (2023), 2300509 [9 pp.]
ISSN: 2199-160X

Factor impacto JCR: 5.3 (2023)

Categ. JCR: PHYSICS, APPLIED rank: 42 / 179 = 0.235 (2023) - Q1 - T1
Categ. JCR: NANOSCIENCE & NANOTECHNOLOGY rank: 46 / 140 = 0.329 (2023) - Q2 - T1
Categ. JCR: MATERIALS SCIENCE, MULTIDISCIPLINARY rank: 122 / 438 = 0.279 (2023) - Q2 - T1

Factor impacto CITESCORE: 11.0 - Electronic, Optical and Magnetic Materials (Q1)

Factor impacto SCIMAGO: 1.689 - Electronic, Optical and Magnetic Materials (Q1)

Financiación: info:eu-repo/grantAgreement/EUR/MICINN/TED2021-130453B-C21
Financiación: info:eu-repo/grantAgreement/EC/H2020/ 861153/EU/Materials for Neuromorphic Circuits/MANIC
Financiación: info:eu-repo/grantAgreement/ES/MICINN/AEI/PID2019-107727RB-I00
Financiación: info:eu-repo/grantAgreement/ES/MICINN/AEI/PID2020-112548RB-I00
Financiación: info:eu-repo/grantAgreement/ES/MICINN/CEX2019-000917-S
Financiación: info:eu-repo/grantAgreement/ES/MICINN-FEDER/PID2020-112914RB-I00

Tipo y forma: Artículo (Versión definitiva)

Área (Departamento): Área Física Materia Condensada (Dpto. Física Materia Condensa.)
Área (Departamento): Área Cienc.Mater. Ingen.Metal. (Dpto. Ciencia Tecnol.Mater.Fl.)