000131287 001__ 131287
000131287 005__ 20240207154753.0
000131287 0247_ $$2doi$$a10.1016/J.APMT.2023.102033
000131287 0248_ $$2sideral$$a136799
000131287 037__ $$aART-2024-136799
000131287 041__ $$aeng
000131287 100__ $$aFrechilla, Alejandro$$uUniversidad de Zaragoza
000131287 245__ $$aSpatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing
000131287 260__ $$c2024
000131287 5060_ $$aAccess copy available to the general public$$fUnrestricted
000131287 5203_ $$aIn this work we study the sub-nanosecond laser-induced crystallization of 10 nm-thick atomic layer deposited amorphous Hf0.5Zr0.5O2 (HZO) films in an air atmosphere. We used an infrared laser with 1064 nm wavelength and 800 ps pulses to anneal TiN/HZO/TiN capacitors by scanning an 80 μm-diameter spot along their top surface in a controlled way. The laser annealing process was optimised in terms of fluence to achieve the complete crystallization of HZO into a non-monoclinic polymorph, as demonstrated by X-ray diffraction and transmission electron microscopy. Piezoresponse force microscopy and polarization-field loops confirm that the optimal as-annealed HZO films are piezoelectric and ferroelectric from the first cycle on. Spatial selectivity was accomplished by scanning the laser on selected areas of the samples. Micro-diffraction experiments show that the transition between the crystallized and the amorphous region is abrupt within a distance of several hundred µm.
000131287 536__ $$9info:eu-repo/grantAgreement/ES/DGA-FEDER E28-23R$$9info:eu-repo/grantAgreement/ES/DGA/T54-23R$$9info:eu-repo/grantAgreement/EC/H2020/882929/EU/Efficient and Robust Oxide Switching/EROS$$9This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No H2020 882929-EROS$$9info:eu-repo/grantAgreement/ES/MICINN-AEI/PID2020-112914RB-100/AEI/10.13039/501100011033
000131287 540__ $$9info:eu-repo/semantics/openAccess$$aby$$uhttp://creativecommons.org/licenses/by/3.0/es/
000131287 655_4 $$ainfo:eu-repo/semantics/article$$vinfo:eu-repo/semantics/publishedVersion
000131287 700__ $$aNapari, Mari
000131287 700__ $$aStrkalj, Nives
000131287 700__ $$aBarriuso, Eduardo
000131287 700__ $$aNiang, Kham
000131287 700__ $$aHellenbrand, Markus
000131287 700__ $$aStrichovanec, Pavel
000131287 700__ $$aSimanjuntak, Firman Mangasa
000131287 700__ $$0(orcid)0000-0001-5661-7964$$aAntorrena, Guillermo
000131287 700__ $$aFlewitt, Andrew
000131287 700__ $$0(orcid)0000-0002-6761-6171$$aMagén, César
000131287 700__ $$0(orcid)0000-0002-0500-1745$$ade la Fuente, Germán F.
000131287 700__ $$aMacManus-Driscoll, Judith L.
000131287 700__ $$0(orcid)0000-0001-5685-2366$$aAngurel, Luis Alberto$$uUniversidad de Zaragoza
000131287 700__ $$0(orcid)0000-0002-0111-8284$$aPardo, José Ángel$$uUniversidad de Zaragoza
000131287 7102_ $$15001$$2065$$aUniversidad de Zaragoza$$bDpto. Ciencia Tecnol.Mater.Fl.$$cÁrea Cienc.Mater. Ingen.Metal.
000131287 773__ $$g36 (2024), 102033 [10 pp.]$$tApplied Materials Today$$x2352-9407
000131287 787__ $$tData of "Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing"$$wDOI: 10.5281/zenodo.10213386
000131287 8564_ $$s6130050$$uhttps://zaguan.unizar.es/record/131287/files/texto_completo.pdf$$yVersión publicada
000131287 8564_ $$s2559495$$uhttps://zaguan.unizar.es/record/131287/files/texto_completo.jpg?subformat=icon$$xicon$$yVersión publicada
000131287 909CO $$ooai:zaguan.unizar.es:131287$$particulos$$pdriver
000131287 951__ $$a2024-02-07-14:37:07
000131287 980__ $$aARTICLE