Resumen: In this work we study the sub-nanosecond laser-induced crystallization of 10 nm-thick atomic layer deposited amorphous Hf0.5Zr0.5O2 (HZO) films in an air atmosphere. We used an infrared laser with 1064 nm wavelength and 800 ps pulses to anneal TiN/HZO/TiN capacitors by scanning an 80 μm-diameter spot along their top surface in a controlled way. The laser annealing process was optimised in terms of fluence to achieve the complete crystallization of HZO into a non-monoclinic polymorph, as demonstrated by X-ray diffraction and transmission electron microscopy. Piezoresponse force microscopy and polarization-field loops confirm that the optimal as-annealed HZO films are piezoelectric and ferroelectric from the first cycle on. Spatial selectivity was accomplished by scanning the laser on selected areas of the samples. Micro-diffraction experiments show that the transition between the crystallized and the amorphous region is abrupt within a distance of several hundred µm. Idioma: Inglés DOI: 10.1016/J.APMT.2023.102033 Año: 2024 Publicado en: Applied Materials Today 36 (2024), 102033 [10 pp.] ISSN: 2352-9407 Financiación: info:eu-repo/grantAgreement/ES/DGA-FEDER E28-23R Financiación: info:eu-repo/grantAgreement/ES/DGA/T54-23R Financiación: info:eu-repo/grantAgreement/EC/H2020/882929/EU/Efficient and Robust Oxide Switching/EROS Financiación: info:eu-repo/grantAgreement/ES/MICINN-AEI/PID2020-112914RB-100/AEI/10.13039/501100011033 Tipo y forma: Artículo (Versión definitiva) Área (Departamento): Área Cienc.Mater. Ingen.Metal. (Dpto. Ciencia Tecnol.Mater.Fl.) Dataset asociado: Data of "Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing" ( DOI: 10.5281/zenodo.10213386)