Bias Induced Transition from an Ohmic to a Non-Ohmic Interface in Supramolecular Tunneling Junctions with Ga2O3/EGaIn Top Electrodes
Wimbush, Kim S. ; Fratila, Raluca M. (Universidad de Zaragoza) ; Wang, Dandan ; Qi, Dongchen ; Liang, Cao ; Yuan, Li ; Yakovlev, Nikolai ; Loh, Kian Ping ; Reinhoudt, David N. ; Velders, Aldrik H. ; Nijhuis, Christian A.
Resumen: This study describes that the current rectification ratio, R = |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ~2.0 nm changed the nature of the monolayer–top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.
Idioma: Inglés
DOI: 10.1039/C4NR02933J
Año: 2014
Publicado en: NANOSCALE 6, 19 (2014), 11246-58
ISSN: 2040-3364
Factor impacto JCR: 7.394 (2014)
Categ. JCR: MATERIALS SCIENCE, MULTIDISCIPLINARY rank: 21 / 260 = 0.081 (2014) - Q1 - T1
Categ. JCR: NANOSCIENCE & NANOTECHNOLOGY rank: 10 / 80 = 0.125 (2014) - Q1 - T1
Categ. JCR: CHEMISTRY, MULTIDISCIPLINARY rank: 19 / 157 = 0.121 (2014) - Q1 - T1
Categ. JCR: PHYSICS, APPLIED rank: 12 / 144 = 0.083 (2014) - Q1 - T1
Tipo y forma: Article (Published version)
Área (Departamento): Área Química Orgánica (Dpto. Química Orgánica)
You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use. You may not use the material for commercial purposes.
Exportado de SIDERAL (2019-05-20-10:30:24)
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Idioma: Inglés
DOI: 10.1039/C4NR02933J
Año: 2014
Publicado en: NANOSCALE 6, 19 (2014), 11246-58
ISSN: 2040-3364
Factor impacto JCR: 7.394 (2014)
Categ. JCR: MATERIALS SCIENCE, MULTIDISCIPLINARY rank: 21 / 260 = 0.081 (2014) - Q1 - T1
Categ. JCR: NANOSCIENCE & NANOTECHNOLOGY rank: 10 / 80 = 0.125 (2014) - Q1 - T1
Categ. JCR: CHEMISTRY, MULTIDISCIPLINARY rank: 19 / 157 = 0.121 (2014) - Q1 - T1
Categ. JCR: PHYSICS, APPLIED rank: 12 / 144 = 0.083 (2014) - Q1 - T1
Tipo y forma: Article (Published version)
Área (Departamento): Área Química Orgánica (Dpto. Química Orgánica)
You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use. You may not use the material for commercial purposes. Exportado de SIDERAL (2019-05-20-10:30:24)
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Record created 2016-12-15, last modified 2019-05-20