Synchronous OEIC integrating receiver for optically reconfigurable gate arrays
Resumen: A monolithically integrated optoelectronic receiver with a low-capacitance on-chip pin photodiode is presented. The receiver is fabricated in a 0.35µm opto-CMOS process fed at 3.3V and due to the highly effective integrated pin photodiode it operates at µW. A regenerative latch acting as a sense amplifier leads in addition to a low electrical power consumption. At 400 Mbit/s, sensitivities of -26.0dBm and -25.5dBm are achieved, respectively, for ¿ = 635nm and ¿ = 675nm (BER =10-9) with an energy efficiency of 2 pJ/bit.
Idioma: Inglés
DOI: 10.3390/s16060761
Año: 2016
Publicado en: Sensors (Switzerland) 16, 6 (2016), 761
ISSN: 1424-8220

Factor impacto JCR: 2.677 (2016)
Categ. JCR: INSTRUMENTS & INSTRUMENTATION rank: 10 / 58 = 0.172 (2016) - Q1 - T1
Categ. JCR: CHEMISTRY, ANALYTICAL rank: 25 / 76 = 0.329 (2016) - Q2 - T1
Categ. JCR: ELECTROCHEMISTRY rank: 12 / 29 = 0.414 (2016) - Q2 - T2

Factor impacto SCIMAGO: 0.623 - Electrical and Electronic Engineering (Q1) - Analytical Chemistry (Q2) - Atomic and Molecular Physics, and Optics (Q2) - Medicine (miscellaneous) (Q2) - Instrumentation (Q2) - Biochemistry (Q3)

Financiación: info:eu-repo/grantAgreement/ES/MEC/CAS14-00326
Financiación: info:eu-repo/grantAgreement/ES/MINECO-FEDER/TEC2011-23211
Financiación: info:eu-repo/grantAgreement/ES/MINECO-FEDER/TEC2014-52840-R
Tipo y forma: Article (Published version)
Área (Departamento): Área Electrónica (Dpto. Ingeniería Electrón.Com.)

Creative Commons You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.


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