Resumen: The addition of nitrogen to the synthesis gas during synthesis of ultrananocrystalline-diamond (UNCD) films results in films uniquely exhibiting very high n-type electrical conductivity even at ambient temperatures. This result is due to the formation of nanowires having elongated diamond core nanostructures and a sp2-bonded C sheath surrounding the core. The work presented here provides detailed confirmation of this important result through spatially resolved-electron energy loss spectroscopy. The direct observation of nitrogen incorporated in the sheath has been enabled. The incorporation of this nitrogen provides strong support to a plausible mechanism for the n-type conduction characteristic of the UNCD films. Idioma: Inglés DOI: 10.1063/1.3095663 Año: 2009 Publicado en: APPLIED PHYSICS LETTERS 94, 11 (2009), 111905 [3 pp.] ISSN: 0003-6951 Factor impacto JCR: 3.554 (2009) Categ. JCR: PHYSICS, APPLIED rank: 14 / 107 = 0.131 (2009) - Q1 - T1 Tipo y forma: Article (Published version)
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