Electrical transport properties of CaB6

Stankiewicz, Jolanta (Universidad de Zaragoza) ; Sesé Monclús, Javier (Universidad de Zaragoza) ; Balakrishnan, Geetha ; Fisk, Zachary

Resumen: We report results from a systematic electron-transport study in a broad temperature range on 12 CaB6 single crystals. None of the crystals were intentionally doped. The different carrier densities observed presumably arise from slight variations in the Ca:B stoichiometry. In these crystals, the variation of the electrical resistivity and of the Hall effect with temperature can be consistently accounted for by the model we propose, in which B-antisite defects (B atom replacing Ca atom) are “amphoteric.” The magnetotransport measurements reveal that most of the samples we have studied are close to a metal-insulator transition at low temperatures. The magnetoresistance changes smoothly from negative—for weakly metallic samples—to positive values—for samples in a localized regime.

Idioma: Inglés

DOI: 10.1103/PhysRevB.90.155128

Año: 2014

Publicado en: Physical review. B, Condensed matter 90 (2014), 155128 [5 pp]
ISSN: 0163-1829

Financiación: info:eu-repo/grantAgreement/ES/DGA/CAMRADS
Financiación: info:eu-repo/grantAgreement/ES/MINECO/MAT2012-38213-C02-01

Tipo y forma: Article (Published version)

Área (Departamento): Física de la Materia Condensada (Departamento de Física de la Materia Condensada)