Pulsed current-voltage electrodeposition of stoichiometric Bi2Te3 nanowires and their crystallographic characterization by transmission electron backscatter diffraction

Manzano, Cristina V. ; Polyakov, Mikhail N. ; Maiz, Jon ; Aguirre Myriam H. (Universidad de Zaragoza) ; Maeder, Xavier ; Martín-González, Marisol

Resumen: Bi2Te3 nanowires with diameters ranging from 25 to 270 nm, ultra-high aspect ratio, and uniform growth front were fabricated by electrodeposition, pulsing between zero current density during the off time and constant potential during the on time (pulsed-current-voltage method, p-IV). The use of zero current density during the off time is to ensure no electrodeposition is carried out and the system is totally relaxed. By this procedure, stoichiometric nanowires oriented perpendicular to the c-axis is obtained for the different diameters of porous alumina templates. In addition, the samples show a uniform growth front with ultra-high aspect ratio single crystal nanowires. The high degree of crystallinity was verified by transmission electron backscatter diffraction. This characterization revealed that the nanowires present both large single crystalline areas and areas with alternating twin configurations.

Idioma: Inglés

DOI: 10.1080/14686996.2019.1671778

Año: 2019

Publicado en: SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 20, 1 (2019), 1022-1030
ISSN: 1468-6996

Originalmente disponible en: Texto completo de la revista

Factor impacto JCR: 5.799 (2019)

Categ. JCR: MATERIALS SCIENCE, MULTIDISCIPLINARY rank: 63 / 314 = 0.201 (2019) - Q1 - T1

Factor impacto SCIMAGO: 1.183 - Materials Science (miscellaneous) (Q1)

Financiación: info:eu-repo/grantAgreement/ES/CSIC/201550E072
Financiación: info:eu-repo/grantAgreement/EC/H2020/734187/EU/Spin conversion, logic storage in oxide-based electronics/SPICOLOST
Financiación: info:eu-repo/grantAgreement/ES/MICINN/MAT2017-86450-C4-3-R

Tipo y forma: Article (Published version)

Área (Departamento): Área Física Materia Condensada (Dpto. Física Materia Condensa.)